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Journal of Electronic Materials

, Volume 20, Issue 11, pp 891–898 | Cite as

Bulk growth of Hg0.8Cd0.2Te single crystals by a combined CVT-seeding technique

  • Heribert Wiedemeier
  • Guangheng Wu
Article

Abstract

The growth of high quality Hg0.8Cd0.2Te bulk single crystals by CVT, combined with an in-situ seeding technique, is reported here for the first time. For this purpose, a temperature difference of 590° → 540° C with a gradient of 40°-50° C/cm at the solid-vapor interface, and about 0.1 atm of HgI2 as a transport agent, were employed. The bulk crystals have the expected stoichiometry and compositional homogeneity. Etch pit densities of 104-105 cm−2 on the (111) face and hitherto unreported etch pits on the (100) face were observed in this work. Possible origins of the sub-grain structure are discussed.

Key words

Hg0.8Cd0.2Te bulk single crystals CVT seeded growth 

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Copyright information

© The Minerals, Metals & Materials Society 1991

Authors and Affiliations

  • Heribert Wiedemeier
    • 1
  • Guangheng Wu
    • 1
  1. 1.Department of ChemistryRensselaer Polytechnic InstituteTroy

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