Metallurgical and Materials Transactions B

, Volume 1, Issue 3, pp 713–724 | Cite as

Aluminum metallization and contacts for integrated circuits

  • Clyde H. Lane


Aluminum metallization for silicon devices and integrated circuits is discussed. The single metallization process is treated for alloying temperatures from 350° to 620°C. Problems associated with interconnecting metal and the contact step are mentioned briefly, but the main emphasis is on alloying itself. Metal migration beneath the oxide is shown and examined as to cause, extent, and variation with various parameters. The defects which are responsible for this penetration have a density which varies with contact area. A hypothesis is proposed which relates these defects to interface states because of their density and behavior under various conditions. Conclusions are drawn with regard to acceptable and improved contacting procedures.


Metallurgical Transaction Penetration Rate Aluminum Film Interface Stress Aluminum Metallization 


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Copyright information

© The Metallurgical Society of American Institute of Mining, Metallurgical and Petroleum Engineers, Inc., and American Society for Metals 1970

Authors and Affiliations

  • Clyde H. Lane
    • 1
  1. 1.Rome Air Development CenterGriffiss Air Force Base

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