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Metallurgical and Materials Transactions B

, Volume 1, Issue 3, pp 635–638 | Cite as

Evidence for the role of certain metallurgical flaws in accelerating electroluminescent diode degradation

  • H. Kressel
  • N. E. Byer
  • H. Lockwood
  • F. Z. Hawrylo
  • H. Nelson
  • M. S. Abrahams
  • S. H. McFarlane
Article

Abstract

Metallurgical imperfections in the recombination region such as dislocations and Ga2Te3 precipitates are shown to greatly increase the rate of degradation of the quantum efficiency of electroluminescent diodes and lasers. In addition, the degradation rate is shown to depend on the acceptor used to form thep-n junction, with beryllium-doped junctions degrading much faster than equivalent zinc-doped devices.

Keywords

GaAs Beryllium Internal Quantum Efficiency Ga2Se3 Ga2Te3 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

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Copyright information

© The Metallurgical Society of American Institute of Mining, Metallurgical and Petroleum Engineers, Inc., and American Society for Metals 1970

Authors and Affiliations

  • H. Kressel
    • 1
  • N. E. Byer
    • 2
  • H. Lockwood
  • F. Z. Hawrylo
  • H. Nelson
  • M. S. Abrahams
  • S. H. McFarlane
  1. 1.Semiconductor Optical Devices ResearchRCA LaboratoriesPrinceton
  2. 2.RIAS Co.Baltimore

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