Electrical properties of Si-SiO2 systems after the application of a magnetic field
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Weak-signal methods are used to study long-term changes in the electrophysical and photoelectric properties of Si-SiO2 systems of n- and p-type semiconductors after the action of a steady magnetic field of 102 Oe. It is found that the field electrode can produce regions characterized by the anomalous recombination, migration, and transformation of nonequilibrium charge carriers, leading to a quasi-oscillating change in the recombination activity of the semiconducting system. It is observed that the magnetically induced changes in the system depend on the impurity of composition of the semiconductor. The results obtained are attributed to the decomposition of the growth structures of complexes and subsequent clustering of the decomposition products at elastic stress sinks.
KeywordsElectric Field Pulse Pulse Magnetic Field Photoelectric Property Plane Distribution Magnetic Treatment
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