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Journal of Electronics (China)

, Volume 9, Issue 3, pp 270–277 | Cite as

Study of the anodization of Al film on InP substrate and its properties

  • Guo Kangjin
  • Du Gendi
  • Wu Zheng
Article
  • 13 Downloads

Abstract

The anodization of Al film on InP substrate and properties of anodic Al2O33/InP have been investigated by AES, DLTS,I-V, C-V and ellipsometer. The results show that the anodic oxide Al2O3 has a permittivity of 11∼12 and a resistivity of 1.3×1013 ohm-cm. Interface state density at Al2O3/InP is about 1011 cm−2·eV−1. DLTS reveals that there is a continuously distributed interface electron traps at Al2O3/InP interface. Anodic Al2O3 exhibits good stability and electrical properties and could be used for passivation, diffusion mask and gate insulator, etc.

Key words

Semiconductor interface Anodization Dielectric thin film 

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Copyright information

© Science Press 1992

Authors and Affiliations

  • Guo Kangjin
    • 1
  • Du Gendi
    • 1
  • Wu Zheng
    • 1
  1. 1.Shanghai Institute of MetallurgyAcademia SinicaShanghai

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