Deep levels related to copper in silicon
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Energy positions and carrier capture cross sections of the deep levels related to copper in silicon are measured by the DLTS. The annealing behaviour and spatial distributions of some of these levels are also studied. The results show that there are no triple acceptor or quadruple states corresponding to the substitutional copper in silicon, which have been reported in literature. Most of the deep levels related to copper in silicon correspond to complexes of copper and defects in silicon.
Key WordsSemiconductor Silicon Deep level DLTS
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