Russian Microelectronics

, Volume 29, Issue 5, pp 331–344 | Cite as

An adsorption ellipsometric method for studying porous films and coatings

  • V. A. Tolmachev


An adsorption ellipsometric method (AEM) that combines multiple-angle ellipsometry, effective-medium approximation, and measurements in a vacuum chamber is suggested. A variety of models and a modified technique for estimating the accuracy of measured parameters extend the ellipsometry potentialities and provide a high reliability of data obtained. The use of the method for porosity determination in the 0.5-70% range was demonstrated with CeO-ZrO2, SiO2, PbO-SiO2,a-C : H, In2O3-SnO2 (ITO), and other films. An approach to finding the porosity, component fraction, and relative composition of pores in porous silicon layers is proposed.


Porous Silicon RUSSIAN Microelectronics Porous Film Porous Silicon Layer Lead Silicate 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


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Copyright information

© MAIK “Nauka/Interperiodica” 2000

Authors and Affiliations

  • V. A. Tolmachev
    • 1
  1. 1.Vavilov State Optical InstituteAll-Russia Research CenterSt. PetersburgRussia

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