Russian Microelectronics

, Volume 29, Issue 4, pp 279–283 | Cite as

Modeling of the gate junction in GaAs MESFETs

  • N. G. Tarnovskii
  • V. S. Osadchuk
  • A. V. Osadchuk


A low-signal equivalent circuit of a GaAs MESFET is suggested. In this circuit, the gate junction is represented so that a potential variation along the channel can be taken into account. A relationship between the gate current and the gate-source and drain-source voltages is found


GaAs Schottky Barrier RUSSIAN Microelectronics Drain Current Gate Current 
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Copyright information

© MAIK “Nauka/Interperiodica” 2000

Authors and Affiliations

  • N. G. Tarnovskii
    • 1
  • V. S. Osadchuk
    • 1
  • A. V. Osadchuk
    • 1
  1. 1.Vinnitsa State Technical UniversityVinnitsaUkraine

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