Russian Microelectronics

, Volume 29, Issue 3, pp 207–213 | Cite as

Simulation of oxygen precipitation in silicon

  • S. V. Bulyarskii
  • V. V. Svetukhin
  • O. V. Prikhod’ko


A theoretical model for nonuniform bulk precipitation is suggested. It can be used for describing internal gettering and providing better insight into SOI-related processes. Oxygen precipitation is shown to be a diffusion-limited process. The size of oxygen precipitates as a function of temperature and annealing time, as well as the thickness of a defect-free zone at the surface, were determined. A test for the optimization of SOI layers resulted from postimplantation annealing is suggested.


RUSSIAN Microelectronics Nucleation Center Material Research Society Interstitial Oxygen Oxygen Precipitation 
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Copyright information

© MAIK “Nauka/Interperiodica” 2000

Authors and Affiliations

  • S. V. Bulyarskii
    • 1
  • V. V. Svetukhin
    • 1
  • O. V. Prikhod’ko
    • 1
  1. 1.Ul’yanovsk State UniversityUl’yanovskRussia

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