Russian Physics Journal

, Volume 41, Issue 5, pp 472–475 | Cite as

Photoelectric properties of magnetically sensitive MOS structures

  • V. N. Davydov
  • O. G. Lanskaya
  • E. P. Lilenko
  • S. N. Nesmelov
Physics Of Semiconductors And Dielectrics


The photoelectric properties of MOS structures having compensation regions near the field electrode have been studied experimentally. It is shown that the presence of such regions can lead to the appearance of a number of features in the integrated photoelectric properties: the presence of a large photovoltage signal in enhancement, dependence of the form of the photovoltage frequency dependence on the intensity of the light flux, and distortion of the shape of the photovoltage signal in inversion. The presence of compensation regions can be established using measurements of the distribution of the photovoltage over the area of the structure and measurements of the voltage dependence of the phase of the integrated photovoltage signal. The increase or decrease of the photovoltage signal in enhancement after exposure to a weak magnetic field is due to the rearrangement of the impurity-defect structure in the near-surface layer of the semiconductor, leading to the appearance of compensated semiconductor regions near the field electrode.


Bias Voltage Voltage Dependence Weak Magnetic Field Light Flux Photoelectric Property 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.


  1. 1.
    Treatment with Pulsed Magnetic Fields: Proceedings of the Fifth Scientific-Technical Seminar with International Participation on Nontraditional Technologies, Sofiya — Nizhnii Novgorod (1992).Google Scholar
  2. 2.
    V. N. Davydov and S. N. Nesmelov, Izv. Vyssh. Uchebn. Zaved., Fiz., No. 2, 62–66 (1997).Google Scholar
  3. 3.
    A. V. Voitsekhovskii and V. N. Davydov, Photoelectric MOS Structures from Narrow-Band Semiconductors [in Russian], Radio i Svyaz’, Tomsk (1990).Google Scholar
  4. 4.
    A. I. Krymskii, Abstract to Dissertation for Candidate of Physico-Mathematical Science IFP SO RAN, Novosibirsk (1992).Google Scholar
  5. 5.
    A. Ya. Shik, Pisma Zh. Tekh. Fiz.,10, No. 12, 755–760 (1984).Google Scholar

Copyright information

© Plenum Publishing Corporation 1998

Authors and Affiliations

  • V. N. Davydov
  • O. G. Lanskaya
  • E. P. Lilenko
  • S. N. Nesmelov

There are no affiliations available

Personalised recommendations