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Effect of the method of fabricating SiC, Si3N4, and a1n specimens on their resistance to hightemperature oxidation

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Abstract

The methods of high-pressure sintering (5 GPa) and, for comparison, conventional hot pressing are used for fabricating high-density specimens from SiC, Si3N4, and A1N with the use of activating additives and without them. The high-temperature oxidation is studied by the method of thermogravimetry at 1400°C with a 150-min hold. The introduction of additives in order to activate the sintering increases the resistance of hot-pressed specimens to high-temperature oxidation and does not influence the stability of materials obtained in a high-pressure apparatus. The corrosion resistance of materials sintered under a high pressure turns out to be much higher than that of hot-pressed materials, which is connected with the formation of superfine-grained densely fit oxide films

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Authors and Affiliations

  1. National Technical University, Ukraine

    S. F. Korablev & I. R. Korableva

  2. Institute of Problems of Material Science of the National Academy of Sciences of Ukraine, Ukraine

    S. F. Korablev & I. R. Korableva

Authors
  1. S. F. Korablev
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  2. I. R. Korableva
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Korablev, S.F., Korableva, I.R. Effect of the method of fabricating SiC, Si3N4, and a1n specimens on their resistance to hightemperature oxidation. Refract Ind Ceram 40, 338–340 (1999). https://doi.org/10.1007/BF02762583

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  • DOI: https://doi.org/10.1007/BF02762583

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