Properties of heterojunctions in the systemn-CdTe-p-ZnTe
Heterojunctions in then-CdTe-p-ZnTe system were prepared via solid-state substitutions, and their properties were studied. Under small forward bias, the current-voltage characteristics of the heterojunctions, both in the dark and under illumination, are dominated by the generation-recombination processes in the spacecharge region. The spectral response of the heterojunctions extends from the band gap of CdTe to that of ZnTe.
KeywordsZnTe Cadmium Telluride Tungsten Filament Lamp Photovoltaic Solar Energy Conversion Produce Surface Layer
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- 1.Fahrenbruch, A.L. and Bube, R.H.,Fundamentals of Solar Cells: Photovoltaic Solar Energy Conversion, New York: Academic, 1983. Translated under the titleSolnechnye elementy: Teoriya i eksperiment, Moscow: Energoatomizdat, 1987.Google Scholar
- 2.Sharma, B.L. and Purohit, R.K.,Semiconductor Heterojunctions, Oxford: Pergamon, 1974. Translated under the titlePoluprovodnikovye geteroperekhody, Moscow: Sovetskoe Radio, 1979.Google Scholar
- 3.Makhnii, V.P., Mechanism of Heterostructure Formation via Solid-State Substitutions in II-VI Compounds,Izv. Akad. Nauk SSSR, Neorg. Mater., 1991, vol. 27, no. 2, pp. 619–620.Google Scholar
- 4.Berchenko, N.N., Krevs, V.E., and Sredin, V.G.,Poluprovodnikovye tverdye rastvory i ikh primenenie (Semiconductor Solid Solutions and Their Applications), Moscow: Voenizdat, 1982.Google Scholar