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Properties of heterojunctions in the systemn-CdTe-p-ZnTe

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Abstract

Heterojunctions in then-CdTe-p-ZnTe system were prepared via solid-state substitutions, and their properties were studied. Under small forward bias, the current-voltage characteristics of the heterojunctions, both in the dark and under illumination, are dominated by the generation-recombination processes in the spacecharge region. The spectral response of the heterojunctions extends from the band gap of CdTe to that of ZnTe.

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Authors and Affiliations

  1. Fed’kovich State University, ul. Kotsyubinskogo 2, 274012, Chernovtsy, Ukraine

    P. N. Gorlei, N. V. Demich, V. P. Makhnii & K. S. Ul’yanitskii

Authors
  1. P. N. Gorlei
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  2. N. V. Demich
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  3. V. P. Makhnii
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  4. K. S. Ul’yanitskii
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Gorlei, P.N., Demich, N.V., Makhnii, V.P. et al. Properties of heterojunctions in the systemn-CdTe-p-ZnTe. Inorg Mater 36, 871–873 (2000). https://doi.org/10.1007/BF02758694

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  • DOI: https://doi.org/10.1007/BF02758694

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