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Inorganic Materials

, Volume 36, Issue 5, pp 518–519 | Cite as

Physical properties of cadmium selenide layers produced by solid-state substitution reactions

  • Makhnii
  • E. V. Makhnii
  • I. M. Fodchuk
Reports Presented at the Second International Conference on the Physical Problems of Semiconductor Materials Research, Chernovtsy, Ukraine, September 8–12, 1997
  • 24 Downloads

Abstract

Hexagonal and cubic CdSe layers were produced on single-crystal CdS and ZnSe substrates by solid-state substitution reactions. The room-temperature conductivity of the layers is dominated by donor levels with ionization energies of 0.7 and 0.16 eV for α- and β-CdSe, respectively. The 300-K photoluminescence spectra of the layers show two emissions differing in origin: one is due to interband transitions, and the other to dissociation of excitons upon inelastic scattering from electrons.

Keywords

ZnSe Inelastic Scattering Interband Transition Incident Intensity Cadmium Selenide 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

References

  1. 1.
    Physics and Chemistry of II-VI Compounds, Aven, M. and Prener, J.S., Eds., Amsterdam: North-Holland, 1967. Translated under the titleFizika i khimiya soedinenii A II B VI, Moscow: Mir, 1970.Google Scholar
  2. 2.
    Sveshnikov, S.V., Smovzh, A.K., and Kaganovich, E.B.,Fotopotentsiometry ifunktsional’nyefotorezistory (Photopotentiometers and Functional Photoresistors), Moscow: Sovetskoe Radio, 1978.Google Scholar
  3. 3.
    Simashkevich, A.V.,Geteroperekhody na osnove poluprovodnikovykh soedinenii A II B VI (II-VI Heterojunctions), Chisinau: Shtiintsa, 1980.Google Scholar
  4. 4.
    Anisimova, I.D., Vikulin, I.M., Zaitov, F.A., and Kurmashev, Sh.D.,Poluprovodnikovye fotopriemniki: ul’trafioletovyi, vidimyi i blizhnii infrakrasnyi diapazony spektra (UV, Visible-Light, and Near-IR Semiconductor Photodetectors), Moscow: Radio i Svyaz’, 1984.Google Scholar
  5. 5.
    Chopra, K. and Das, S.,Thin Film Solar Cells, New York: Plenum, 1983. Translated under the titleTonkoplenochnye solnechnye elementy, Moscow: Mir, 1986.Google Scholar
  6. 6.
    Berezovskii, M.M. and Makhnii, E.V., Properties of CdSe Layers Grown on Substrates with Cubic and Hexagonal Structures,Fiz, Tverd. Tela (S.-Peterburg), 1996, vol. 38, no. 2, pp. 646–648.Google Scholar
  7. 7.
    Kalinkin, I.P., Aleksovskii, V.B., and Simashkevich, A.V.,Epitaksial’nye plenki soedinenii A 2 B 6 (II-VI Epitaxial Films), Leningrad: Leningrad. Gos. Univ., 1978.Google Scholar
  8. 8.
    Makhniy, O.V., Slyotov, M.M., and Fodchuk, I.M., Photoluminescence of Cubic Cadmium Selenide Layers,II Int. School-Conf. on the Physical Problems in Materials Science of Semiconductors, Chernovtsy, 1997, p. 203.Google Scholar
  9. 9.
    Gribkovskii, V.P.,Teoriya pogloshcheniya i ispuskaniya sveta v poluprovodnikakh (Theory of Light Emission and Absorption in Semiconductors), Minsk: Nauka i Tekhnika, 1975.Google Scholar
  10. 10.
    Koh Era and Langer, D.W., Luminescence of ZnSe near the Band Edge under Strong Laser Light Excitation,J. Lumin., 1970, vol. 1/2, pp. 514–527.CrossRefGoogle Scholar

Copyright information

© MAIK “Nauka/Interperiodica” 2000

Authors and Affiliations

  • Makhnii
    • 1
  • E. V. Makhnii
    • 1
  • I. M. Fodchuk
    • 1
  1. 1.Fed’kovich State UniversityChernovtsyUkraine

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