Abstract
Hexagonal and cubic CdSe layers were produced on single-crystal CdS and ZnSe substrates by solid-state substitution reactions. The room-temperature conductivity of the layers is dominated by donor levels with ionization energies of 0.7 and 0.16 eV for α- and β-CdSe, respectively. The 300-K photoluminescence spectra of the layers show two emissions differing in origin: one is due to interband transitions, and the other to dissociation of excitons upon inelastic scattering from electrons.
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Makhnii, Makhnii, E.V. & Fodchuk, I.M. Physical properties of cadmium selenide layers produced by solid-state substitution reactions. Inorg Mater 36, 518–519 (2000). https://doi.org/10.1007/BF02758062
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DOI: https://doi.org/10.1007/BF02758062