Inorganic Materials

, Volume 36, Issue 2, pp 100–104 | Cite as

On the determination of carrier mobility in compensated GaAs

  • F. P. Korshunov
  • N. F. Kurilovich
  • L. I. Murin
  • T. A. Prokhorenko


The applicability of the Brooks-Herring and Conwell-Weisskopf formulas in calculations of the carrier mobility associated with scattering by ionized impurities is examined usingn-type GaAs as an example. The Brooks-Herring approximation is shown to be inapplicable at large compensation ratios, where the Conwell-Weisskopf formula is more accurate. The applicability limits of the two formulas are established for calculations of carrier mobility from dopant concentration and compensation ratio and for calculations of the concentration of ionized centers (compensation ratio) from carrier concentration and mobility. The predicted applicability limits are consistent with experimental data.


GaAs Carrier Mobility Applicability Limit Sation Ratio Compensation Ratio 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.


  1. 1.
    Krivov, M.A., Malyanov, S.V., andMelev, V.G., Hall Mobility in Compensated Gallium Arsenide,Izv. Vyssh. Uchebn. Zaved., Fiz., 1973, no. 12, pp. 135–137.Google Scholar
  2. 2.
    Omel’yanovskii, E.M., Meier, A.A., and Fistul’, V.I., On the Separate Determination of Donor and Acceptor Concentrations,Zavod. Lab., 1966, vol. 32, no. 4, pp. 448–450.Google Scholar
  3. 3.
    Walukiewicz, W., Lagowski, J., Jastrebski, L.,et al., Electron Mobility and Free-Carrier Absorption in GaAs: Determination of the Compensation Ratio,J. Appl. Phys., 1979, vol. 50, pp. 899–908.CrossRefGoogle Scholar
  4. 4.
    Walukiewicz, W., Lagowski, J., and Gatos, H.C., Electron Mobility in n-Type GaAs at 77 K: Determination of the Compensation Ratio,J. Appl. Phys., 1982, vol. 53, pp. 769–770.CrossRefGoogle Scholar
  5. 5.
    Seeger, K.,Semiconductor Physics, Vienna: Springer, 1973. Translated under the titleFizika poluprovodnikov, Moscow: Mir, 1978.Google Scholar
  6. 6.
    Wolfe, S.M., Stillman, G.E., and Dimmok, J.O., Ionized Impurity in n-Type GaAs,J. Appl. Phys., 1970, vol. 41, pp. 504–507.CrossRefGoogle Scholar
  7. 7.
    Itoh, K.M., Kinoshita, T., Walukiewicz, W., {eaet al.}, Ionized Impurity Scattering in Isotopically Engineered, Compensated Ge:Ga, As,19th Int. Conf. on Defects in Semiconductors, Aveiro, 1997, p. 98.Google Scholar
  8. 8.
    Wolfe, CM., Stillman, G.E., and Lindley, W.T., Electron Mobility in High-Purity GaAs,J. Appl. Phys., 1970, vol. 41, no. 7, pp. 3038–3091.CrossRefGoogle Scholar
  9. 9.
    Pons, D. and Bourgoin, J., Irradiation-Induced Defects in GaAs,J. Phys. C: Solid State Phys., 1985, vol. 18, pp. 3839–3871.CrossRefGoogle Scholar
  10. 10.
    Korshunov, F.P., Prokhorenko, T.A., andSobolev, N.A., Effect of Electron Irradiation on the Photoluminescence and Electrical Properties of Isotopically Doped Gallium,Vestsi Akad. Navuk BSSR, Ser Fiz.-Mat. Navuk, 1991, no. 1, pp. 44–50.Google Scholar

Copyright information

© MAIK “Nauka/Interperiodica” 2000

Authors and Affiliations

  • F. P. Korshunov
    • 1
  • N. F. Kurilovich
    • 1
  • L. I. Murin
    • 1
  • T. A. Prokhorenko
    • 1
  1. 1.Institute of Solid-State and Semiconductor PhysicsBelarussian Academy of SciencesMinskBelarus

Personalised recommendations