Abstract
AgInTe2 thin films were deposited onto glass substrates by pulsed laser ablation. Their structure, composition, and transmission and reflection spectra in the range 0.5 to 2.5 Μm were studied. The absorption coefficient, energies of band-to-band transitions, and parameters of crystal-field and spin-orbit splittings were determined. The results obtained for the AgInTe2 films are in good agreement with the data for bulk crystals.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
Loferski, J.J., The Role of Multinary Alloys of I-III-VI2 Chalcopyrite Semiconductors in Solar Cells,Cryst. Res. Technoi, 1996, vol. 31, no. 1, pp. 419–429.
Schock, H.W., Thin Film Photovoltaics,Appl. Surf. Sci., 1996, vol. 92, pp. 606–616.
Zhuze, V.P., Sergeeva, V.M. and Shtrum, E.A., ABX2 Semiconductors,Zh. Tekh. Fiz., 1958, vol. 28, no. 10, pp. 2095–2108.
Austin, I.G., Goodmann, C.H.L. and Pengelly, A.E., New Semiconductors with the Chalcopyrite Structure,J. Electmchem. Soc., 1956, vol. 103, no. 11, pp. 609–610.
Cademes, R., Quintero, M. and Wooley, J.C.,T(z) Diagram and Optical Energy Gap Values of (AgIn)2(1_2)(CdIn2)zTe4 Alloys,Phys. Status Solidi A, 1994, vol. 144, no. 2, pp. 311–316.
Quintero, M., Tovar, R., Bellabarba, C. and Wooley, J.C., Temperature Variation of Optical Energy Gap and Determination Potentials in AgInTe2,Phys. Status Solidi B, 1990, vol. 162, no. 2, pp. 517–521.
Rincon, C.J., On the Deformation Potentials in CuInSe2 Ternary Semiconductors,J. Phys. Chem. Solids, 1988, vol. 49, no. 4, p. 391.
Patel, S.M. and Patel, B.H., The Electrical and Optical Properties of Polycrystalline AgInTe2 Thin Films,Mater. Lett., 1985, vol. 5, no. 1/2, pp. 35–38.
Patel, S.M. and Patel, B.H., The Anomalous Photovoltaic Effect in Polycrystalline AgInTe2 Thin Films,Thin Solid Films, 1989, vol. 173, no. 2, pp. 169–173.
Vaidhyanathan, R., Pinjare, S.L. and Sebhanadri, J., The Optical Properties of AgInTe2 Thin Films,Thin Solid Films, 1983, vol. 105, no. 2, pp. 157–162.
Abrahams, G.S.C. and Bernstein, J.L., Piezoelectric Nonlinear Optic CuGaSe2 and CuInSe2 Crystal Structure: Sublattice Distortion in AIBIIIC VI2 ,J. Chem. Phys., 1973, vol. 59, no. 10, pp. 5415–5422.
Bodnar, I.V. and Orlova, N.S., X-ray Study of Thermal Expansion in CuAlSe2, CuGaSe2, and CuInSe2 Compounds over Temperature Range from 90 to 650 K,Phys. Status Solidi A, 1983, vol. 78, no. 3, pp. K59-K63.
Hernandez-Rojas, J.L., Lucia, M.L., Martil, L.,et al., Optical Analysis of Absorption in Thin Films: Application to Ternary Chalcopyrite Semiconductors,Appl. Opt., 1992, vol. 31, no. 10, pp. 1606–1611.
Shay, J.L. and Wernick, J.H.,Ternary Chalcopyrite Semiconductors: Growth, Electronic Properties, and Application, New York: Pergamon, 1975.
Shay, J.L., Tell, B., Kasper, H.M. and Shiavone, L.M.,p-d Hybridization of the Valence Bands of I-III-VI2 Compounds,Phys. Rev. B: Solid State, 1972, vol. 5, no. 12, pp. 5003–5005.
Bellabarba, C., Gonzales, J., Rincon, C. and Quinters, M., Photoconductivity and Valence Band Structure of AgInTe2,Solid State Commun., 1986, vol. 58, no. 4, pp. 243–246.
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Bodnar’, I.V., Gremenok, V.F., Bente, K. et al. Fabrication and properties of AgInTe2 thin films. Inorg Mater 36, 1000–1003 (2000). https://doi.org/10.1007/BF02757975
Received:
Issue Date:
DOI: https://doi.org/10.1007/BF02757975