Inorganic Materials

, Volume 36, Issue 10, pp 991–996 | Cite as

InSb-InAs alloys prepared by rapid quenching (106–108 K/s)

  • V. M. Glazov
  • K. B. Poyarkov


Homogeneous InSb-InAs alloys are prepared by rapid quenching (106-108 K/s) from the liquid state. As evidenced by x-ray diffraction studies, rapid quenching prevents liquid-phase segregation, so that solidification proceeds by a diffusionless mechanism. The lattice parameters of the rapidly quenched alloys are determined. The effects of melt overheating and sample thickness on the diffusionless solidification process are analyzed. The nonlinear composition dependence of the lattice parameter in the InSb-InAs system is accounted for using the calculated degrees of dissociation of InSb and InAs along the liquidus line and at 1000‡C and the covalent radii of the constituent elements.


InSb GaSb Composition Dependence Rapid Quenching Liquidus Line 
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Copyright information

© MAIK “Nauka/Interperiodica” 2000

Authors and Affiliations

  • V. M. Glazov
    • 1
  • K. B. Poyarkov
    • 1
  1. 1.Moscow State Institute of Electronic Engineering (Technical University)Zelenograd, Moscow oblastRussia

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