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Inorganic Materials

, Volume 36, Issue 10, pp 991–996 | Cite as

InSb-InAs alloys prepared by rapid quenching (106–108 K/s)

  • V. M. Glazov
  • K. B. Poyarkov
Article

Abstract

Homogeneous InSb-InAs alloys are prepared by rapid quenching (106-108 K/s) from the liquid state. As evidenced by x-ray diffraction studies, rapid quenching prevents liquid-phase segregation, so that solidification proceeds by a diffusionless mechanism. The lattice parameters of the rapidly quenched alloys are determined. The effects of melt overheating and sample thickness on the diffusionless solidification process are analyzed. The nonlinear composition dependence of the lattice parameter in the InSb-InAs system is accounted for using the calculated degrees of dissociation of InSb and InAs along the liquidus line and at 1000‡C and the covalent radii of the constituent elements.

Keywords

InSb GaSb Composition Dependence Rapid Quenching Liquidus Line 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© MAIK “Nauka/Interperiodica” 2000

Authors and Affiliations

  • V. M. Glazov
    • 1
  • K. B. Poyarkov
    • 1
  1. 1.Moscow State Institute of Electronic Engineering (Technical University)Zelenograd, Moscow oblastRussia

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