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Experimental determination of the valence band structure of the InxGa1-x-As(001) surface

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Abstract

InxGaj1-xAs layers were grown on GaAs(00l) substrates by molecular beam epitaxy. The structure and quality of the surface and the layer thickness were monitored in situ by dynamical reflection high-energy electron diffraction (RHEED oscillations). Angle-resolved photoemission spectroscopy studies using He-I radiation were performed on the epitaxial layers. The energy-distribution curves of the photoelectrons were determined along the high symmetric directions in the surface Brillouin zone. The experimental band structure of InxGa1-xAs was determined with the help of the experimental and theoretical band structures of GaAs and In As.

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  1. Research Institute for Technical Physics and Materials Science, Hungarian Academy of Sciences, P.O.B. 49, H-1525, Budapest

    á. Nemcsics

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  1. á. Nemcsics
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Nemcsics, á. Experimental determination of the valence band structure of the InxGa1-x-As(001) surface. Inorg Mater 36, 979–990 (2000). https://doi.org/10.1007/BF02757972

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  • DOI: https://doi.org/10.1007/BF02757972

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