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Thermal oxidation of V2S5/InP heterostructures in oxygen

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Abstract

X-ray emission and IR spectroscopy data are used to elucidate the mechanism of thermal oxidation of V2S5/InP structures in oxygen. The substrate-activator interaction is shown to have a significant effect on the oxidation mechanism and to improve the engineering performance of the structures.

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Authors and Affiliations

  1. Voronezh State University, Universitetskaya pi. 1, 394693, Voronezh, Russia

    I. Ya. Mittova, I. M. Soshnikov, V. A. Terekhov & V. N. Semenov

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  1. I. Ya. Mittova
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  2. I. M. Soshnikov
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  3. V. A. Terekhov
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  4. V. N. Semenov
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Mittova, I.Y., Soshnikov, I.M., Terekhov, V.A. et al. Thermal oxidation of V2S5/InP heterostructures in oxygen. Inorg Mater 36, 975–978 (2000). https://doi.org/10.1007/BF02757971

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  • DOI: https://doi.org/10.1007/BF02757971

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