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Bulletin of Materials Science

, Volume 17, Issue 6, pp 1057–1064 | Cite as

Influence of deviation from stoichiometry on the photoluminescence in CdTe doped with indium

  • Suma Gurumurthy
  • K S R K Rao
  • A K Sreedhar
  • H L Bhat
  • B Sundersheshu
  • R K Bagai
  • Vikram Kumar
Article

Abstract

Low temperature photoluminescence of vacuum and cadmium annealed CdTe:In is reported here. A new peak at ∼ 1·14 eV related to transitions from the conduction band to an acceptor involving a tellurium vacancy has been observed.

Keywords

Cadmium telluride photoluminescence annealing stoichiometry indium doping 

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References

  1. Agrinskaya N V, Arkad’eva E N and Matveev O A 1971Soviet Phys. Semicond. 5 762Google Scholar
  2. Amirtharaj P M and Pollak F H 1984Appl. Phys. Lett. 45 789CrossRefGoogle Scholar
  3. Babentsov V N, Rashkovetskii L V, Sal’kov E A and Tarbaev N I 1992Sov. Phys. Semicond. 26 608 and references thereinGoogle Scholar
  4. Bagai R K and Borle W N 1989J. Cryst. Growth 94 561CrossRefGoogle Scholar
  5. Barnes C E and Zanio K 1975J. Appl. Phys. 46 3959CrossRefGoogle Scholar
  6. Bell R O, Wald F V, Canali C, Nava F and Ottaviani G 1974IEEE Trans. Nucl. Sci. NS-21 331CrossRefGoogle Scholar
  7. Bowman R C Jr and Cooper D E 1988Appl. Phys. Lett. 53 1521CrossRefGoogle Scholar
  8. Caillot M 1972Phys. Lett. A38 2Google Scholar
  9. Chamonal J P, Molva E and Pautrat J L 1982Solid State Commun. 43 801CrossRefGoogle Scholar
  10. Das S R, Cook J G, Rowell N L and Aouadi M S 1990J. Appl. Phys. 68 5796 and references thereinCrossRefGoogle Scholar
  11. Halsted R E, Lorenz M R and Segall B 1961J. Phys. Chem. Solids 22 109CrossRefGoogle Scholar
  12. Hofmann D M, Omling P, Grimmeiss H G, Meyer B K, Benz K W and Sinerius D 1992Phys. Rev. B45 6247Google Scholar
  13. Kernocker R, Lischka K and Palmetshofer L 1988J. Cryst. Growth 86 625CrossRefGoogle Scholar
  14. Lorentz M R and Segall B 1963Phys. Lett. 7 18CrossRefGoogle Scholar
  15. Mazzaschi J, Barrau J, Brabant J C, Brousseau M, Maaref H, Voillot F and Boissy M C 1980Rev. Phys. Appl. 15 861Google Scholar
  16. Molva E, Chamonal J P and Pautrat J L 1982Phys. Status Solidi B109 635CrossRefGoogle Scholar
  17. de Nobel 1959Philips Res. Rep. 14 361Google Scholar
  18. Onodera C and Taguchi T 1990J. Cryst. Growth 101 502CrossRefGoogle Scholar
  19. Rud Yu V, Sanin K V and Shreter Yu G 1971Sov. Phys. Semicond. 5 573Google Scholar
  20. Sobiesierski Z, Dharmdasa I M and Williams R H 1988Appl. Phys. Lett. 53 2623CrossRefGoogle Scholar
  21. Swaminathan V, Schumaker N E and Zilko J L 1981aJ. Lumin. 22 153CrossRefGoogle Scholar
  22. Swaminathan V, Anthony P J, Zilko J L, Sturge M D and Schumaker N E 1981bJ. Appl. Phys. 52 5603CrossRefGoogle Scholar
  23. Swaminathan V, Donnelly V M and Long J 1985J. Appl. Phys. 58 4565CrossRefGoogle Scholar
  24. Uchida I 1964J. Phys. Soc. Jpn 19 670CrossRefGoogle Scholar
  25. Vavilov V S, Gippius A A and Panossian J R 1967Proc. int. conf. II-VI semiconducting compounds (ed.) D G Thomas (New York: Benjamin Inc.) p. 743Google Scholar
  26. Yu P W 1977J. Appl. Phys. 48 5043CrossRefGoogle Scholar

Copyright information

© Indian Academy of Sciences 1994

Authors and Affiliations

  • Suma Gurumurthy
    • 1
  • K S R K Rao
    • 1
  • A K Sreedhar
    • 1
  • H L Bhat
    • 1
  • B Sundersheshu
    • 1
    • 2
  • R K Bagai
    • 1
    • 2
  • Vikram Kumar
    • 1
    • 2
  1. 1.Department of PhysicsIndian Institute of ScienceBangaloreIndia
  2. 2.Solid State Physics LaboratoryDelhiIndia

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