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Influence of deviation from stoichiometry on the photoluminescence in CdTe doped with indium

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Abstract

Low temperature photoluminescence of vacuum and cadmium annealed CdTe:In is reported here. A new peak at ∼ 1·14 eV related to transitions from the conduction band to an acceptor involving a tellurium vacancy has been observed.

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Gurumurthy, S., Rao, K.S.R.K., Sreedhar, A.K. et al. Influence of deviation from stoichiometry on the photoluminescence in CdTe doped with indium. Bull. Mater. Sci. 17, 1057–1064 (1994). https://doi.org/10.1007/BF02757582

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  • DOI: https://doi.org/10.1007/BF02757582

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