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Bulletin of Materials Science

, Volume 16, Issue 4, pp 325–329 | Cite as

Oxidation kinetics of reaction-sintered silicon carbide

  • O P Chakrabarti
  • J Mukerji
Article

Abstract

The oxidation kinetics of reaction-sintered silicon carbide has been studied over the temperature range 1200° to 1350°C. The material has a bulk density of 3·00 g/cm3 and the unreacted Si content is 22·5% (v/v). The activation energy for oxidation is 28·75 ± 2·61 kcal/mol. It is proposed that the diffusion of oxygen through the growing oxide film is the rate-controlling process.

Keywords

Oxidation silicon carbide 

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Copyright information

© Indian Academy of Sciences 1993

Authors and Affiliations

  • O P Chakrabarti
    • 1
  • J Mukerji
    • 1
  1. 1.Central Glass and Ceramic Research InstituteJadavpur, CalcuttaIndia

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