Deep level transient spectroscopy of anisotropic semiconductor GaTe
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Deep level transient spectroscopy (DLTS) was carried out on single crystals of the layered chalcogenide p-GaTe using Schottky barriers parallel and perpendicular to the layer planes to study the possible anisotropy of the defect levels. Deep levels with the same energies (0·28 eV and 0·42–0·45eV) have been found in both directions with concentrations ranging from 1013cm−3 to 1014 cm−3 and capture cross-sections from 10−15cm2 to 10−17cm2. The difference in the spectra obtained from the two planes and the possible reason for the deep level energies being independent of crystal orientation are discussed.
KeywordsGaTe deep levels anisotropy
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