Effect of heavy-ion irradiation on dielectric constant and electrical conductivity of doped and undoped nonlinear substance
- 58 Downloads
Implantations were carried out on gel-grown potassium dihydrogen orthophosphate (KDP) and those doped with magnesium oxide (MgO) single crystals using 100 MeV Ag+ heavy-ion beam of 15 UD 16 MV pelletron accelerator. To conduct a comparative study, measurements were carried out in the temperature range 243 K-403 K at frequencies ranging from 1 kHz-1 MHz on irradiated and nonirradiated nonlinear samples. It was observed that the mechanism of dielectric behaviour varied with frequency, temperature and ion irradiation. Further, implantation produced erratic variation in the conductivity both in the intrinsic and extrinsic regions, and also in the dielectric behaviour of the substance. The property of sensitive dependence on initial conditions, namely, chaos had set in after ion irradiation. However, the doping effect had not completely terminated the above transition, leading to chaos in the nonlinear medium.
KeywordsKDP heavy-ion irradiation implantation dielectric constant electrical conductivity nonlinear crystal property of sensitive dependence chaos
Unable to display preview. Download preview PDF.
- Arnold G W, Carnera A and Mazzoldi P 1988bLaser and particle beam chemical processing for microelectronics (eds) D J Ehrlich, G S Higasiu and M M Oprysko (Pittsburgh: Materials Research Society) p. 453Google Scholar
- Benoit B Mandelbrot 1982The fractal geometry of nature (San Francisco: Freeman)Google Scholar
- George A W 1989Nucl. Instrum. & Meth. Phys. Res. B39 708Google Scholar
- Gulick D 1992Encounters with chaos (New York: McGraw Hill)Google Scholar
- Jackel J L and Rice C E 1984Proc. SPIE 460 43Google Scholar
- Nadru J M and Wiss B L 1988J. Light wave Technol. LT-4,B32 315Google Scholar