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Bulletin of Materials Science

, Volume 13, Issue 1–2, pp 89–94 | Cite as

Characterisation of vacancy-like defects in III–V compound semiconductors using positron annihilation technique

  • A Sen Gupta
First National Seminar On GaAs And III–V Compound Semiconductors

Abstract

Single crystals of GaP and InSb were irradiated by 3 MeV electrons at 20 K to a total dose of 4 × 1018 e /cm2. Isochronal annealing in the temperature region 77–650 K followed the irradiation. In GaP, the positron lifetime measurement indicated the presence of irradiation-induced vacancies in the Ga-sublattice. The vacancies disappeared at two stages observed in temperature ranges 200–300 and 450–550 K. In InSb the positron lifetime was found to increase by 8 ps compared to that in as-grown crystals (i.e. 282±2 ps) after irradiation. The increase indicated the presence of irradiation-induced defects; the crystal was found to recover until 350 K with a sharp annealing stage at 250–350 K.

Keywords

III–V compound semiconductors positron annihilation technique vacancy-like defects irradiation induced defects 

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Copyright information

© The Indian Academy of Sciences 1990

Authors and Affiliations

  • A Sen Gupta
    • 1
  1. 1.Cyclic Accelerator DivisionSaha Institute of Nuclear PhysicsCalcuttaIndia

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