Abstract
Single crystals of GaP and InSb were irradiated by 3 MeV electrons at 20 K to a total dose of 4 × 1018 e −/cm2. Isochronal annealing in the temperature region 77–650 K followed the irradiation. In GaP, the positron lifetime measurement indicated the presence of irradiation-induced vacancies in the Ga-sublattice. The vacancies disappeared at two stages observed in temperature ranges 200–300 and 450–550 K. In InSb the positron lifetime was found to increase by 8 ps compared to that in as-grown crystals (i.e. 282±2 ps) after irradiation. The increase indicated the presence of irradiation-induced defects; the crystal was found to recover until 350 K with a sharp annealing stage at 250–350 K.
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Gupta, A.S. Characterisation of vacancy-like defects in III–V compound semiconductors using positron annihilation technique. Bull. Mater. Sci. 13, 89–94 (1990). https://doi.org/10.1007/BF02744862
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DOI: https://doi.org/10.1007/BF02744862