Abstract
Photoluminescence (PL) studies on LPE-grown InP layers doped with selenium and having carrier concentrations from 1 × 1018 to 1 × 1020 cm−3 have been reported in this paper. Measurements at 300 and 77 K showed that the band to band recombination peak energy shifts to values as high as 1·7 eV with increasing doping, the increase being sharp beyond 4 × 1019 cm−3. These results have been explained as being the result of the Burstein shift and the band-gap shrinkage.
Similar content being viewed by others
References
Baumann G G, Benz K W and Pilkhun M H 1976J. Electrochem. Soc. 123 1232
Bendapudi S 1985LPE growth and characterisation of heavily-doped n-InP, Ph.D. thesis, Indian Institute of Technology, Kharagpur
Casey H C Jr and Stern F 1976J. Appl. Phys. 47 631
De-Sheng J, Makita Y, Ploog K and Queisser 1982J. Appl. Phys. 53 999
Dumke W P 1970Phys. Rev. B2 4126
Eagles D M 1960J. Phys. Chem. Solids 16 76
Halperin B I and Lax M 1966Phys. Rev. 148 722
Hawrylo F Z 1980Appl. Phys. Lett. 37 1038
Nag B R 1980Electron transport in compound semiconductors (New York: Springer-Verlag)
Oligo D, Cardona M and Miller H 1980Phys. Rev. B22 894
Roeder O, Hermand U and Pilkhun M H 1970J. Phys. Chem. Solids 31 2625
Vilkotskii V A, Domanevakii D S, Kakanov R D, Krasovaskii V V and Thurchev 1979Phys. Status Solidi B91 71
Williams E W, Elder W, Astles M G, Webb M, Muller J B, Straughan B and Tufton P J 1973J. Electrochem. Soc. 120 1750
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Bendapudi, S., Bose, D.N. Photoluminescence and heavy doping effects in InP. Bull. Mater. Sci. 13, 75–82 (1990). https://doi.org/10.1007/BF02744860
Issue Date:
DOI: https://doi.org/10.1007/BF02744860