Abstract
Photoluminescence (PL) studies on LPE-grown InP layers doped with selenium and having carrier concentrations from 1 × 1018 to 1 × 1020 cm−3 have been reported in this paper. Measurements at 300 and 77 K showed that the band to band recombination peak energy shifts to values as high as 1·7 eV with increasing doping, the increase being sharp beyond 4 × 1019 cm−3. These results have been explained as being the result of the Burstein shift and the band-gap shrinkage.
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Bendapudi, S., Bose, D.N. Photoluminescence and heavy doping effects in InP. Bull. Mater. Sci. 13, 75–82 (1990). https://doi.org/10.1007/BF02744860
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DOI: https://doi.org/10.1007/BF02744860