Bulletin of Materials Science

, Volume 13, Issue 1–2, pp 75–82 | Cite as

Photoluminescence and heavy doping effects in InP

  • Seishu Bendapudi
  • D N Bose
First National Seminar On GaAs And III–V Compound Semiconductors


Photoluminescence (PL) studies on LPE-grown InP layers doped with selenium and having carrier concentrations from 1 × 1018 to 1 × 1020 cm−3 have been reported in this paper. Measurements at 300 and 77 K showed that the band to band recombination peak energy shifts to values as high as 1·7 eV with increasing doping, the increase being sharp beyond 4 × 1019 cm−3. These results have been explained as being the result of the Burstein shift and the band-gap shrinkage.


Photoluminescence heavy doping effects Burstein shift band-gap shrinkage 


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Copyright information

© The Indian Academy of Sciences 1990

Authors and Affiliations

  • Seishu Bendapudi
    • 1
  • D N Bose
    • 1
    • 2
  1. 1.R and D DivisionSemiconductor Complex Limited, Phase VIII, S.A.S. NagarPunjabIndia
  2. 2.Materials Science CentreIndian Institute of TechnologyKharagpurIndia

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