Abstract
Cerium(III) orthovanadate with a small deviation from stoichiometric composition is ap-type semiconductor between 30 and 800°C. The electrical conduction in cerium(III) orthovanadate is due to thermally activated hopping of holes on equivalent Ce3+-Ce4+ lattice sites. The DTA result of CeVO4 indicated a possible phase transition at about 70°C. The IR spectrum of the sample showed bands at 865 and 810 cm−1, typical of VO4 group of orthovanadates.
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References
Ayamonino P J and Baran E J 1971Z. Anorg. Allg. Chem. 383 226
ASTM Card File No 12–757 Nat. Bur. Std. US mono 1961 25 Sec 1
Escobar M E and Baran E J 1978Z. Anorg. Allg. Chem. 441 273
Muller A, Brown E J and Carter M O 1976Structure Bond 26 81
Palanna O G and Suresh Rao N 1995Bull. Mater. Sci. 18 229
Palanna O G, Shashimohan A L and Biswas A B 1977Proc. Indian Acad. Sci. A86 455
Schwartz H 1963Z. Anorg. Allg. Chem. 323 44
Seibert H 1954Z. Anorg. Allg. Chem. 275 225
Wycoff R W J 1965Crystal structure (New York: John-Wiley and Sons) Vol. 3, p. 35
Yashimura M and Sata T 1969Bull. Chem. Soc. Jap. 42 3195
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Rao, N.S., Palanna, O.G. Electrical, thermal and infrared studies of cerium(III) orthovanadate. Bull. Mater. Sci. 18, 593–597 (1995). https://doi.org/10.1007/BF02744845
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DOI: https://doi.org/10.1007/BF02744845