Electrical, thermal and infrared studies of cerium(III) orthovanadate
Cerium(III) orthovanadate with a small deviation from stoichiometric composition is ap-type semiconductor between 30 and 800°C. The electrical conduction in cerium(III) orthovanadate is due to thermally activated hopping of holes on equivalent Ce3+-Ce4+ lattice sites. The DTA result of CeVO4 indicated a possible phase transition at about 70°C. The IR spectrum of the sample showed bands at 865 and 810 cm−1, typical of VO4 group of orthovanadates.
KeywordsSemiconductor nonstoichiometric composition phase transition
Unable to display preview. Download preview PDF.
- ASTM Card File No 12–757 Nat. Bur. Std. US mono 1961 25 Sec 1Google Scholar
- Palanna O G and Suresh Rao N 1995Bull. Mater. Sci. 18 229Google Scholar
- Palanna O G, Shashimohan A L and Biswas A B 1977Proc. Indian Acad. Sci. A86 455Google Scholar
- Wycoff R W J 1965Crystal structure (New York: John-Wiley and Sons) Vol. 3, p. 35Google Scholar