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Oxygen diffusion and defect mechanism in c-axis textured thin films of YBa2Cu3O7−x by resistivity measurements

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Abstract

Isothermal resistivity measurements have been carried out to study the dynamics of oxygen out- and in-diffusion in thin films of YBa2Cu3O7−x in the temperature range 648–773 K. The activation energies for the out- and in-diffusion were determined to be 1·36 and 0·7 eV respectively. We have modelled the resistance-time plots for the oxygen in-diffusion using an equation for one dimensional diffusion into a plane. The microstructural defects such as low angle grain boundaries associated with the c-axis oriented grains are believed to provide the required diffusion paths in thin films of YBCO.

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Authors and Affiliations

  1. Metallurgy Division, Indira Gandhi Centre for Atomic Research, 603 102, Kalpakkam, India

    P Kuppusami, E Mohandas, S Raju & V S Raghunathan

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  1. P Kuppusami
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  2. E Mohandas
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  3. S Raju
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  4. V S Raghunathan
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Kuppusami, P., Mohandas, E., Raju, S. et al. Oxygen diffusion and defect mechanism in c-axis textured thin films of YBa2Cu3O7−x by resistivity measurements. Bull Mater Sci 20, 491–497 (1997). https://doi.org/10.1007/BF02744761

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