Abstract
Positron annihilation spectroscopy (PAS) is a powerful probe to study open-volume defects in solids. Its success is due to the propensity of positrons to seek out low-density regions of a solid, such as vacancies and voids, and the emissions of gamma rays from their annihilations that carry information about the local electronic environment. The development of low-energy positron beams allows probing of defects to depths of few microns, and can successfully characterize defects in the near-surface and interface regions of several technologically important systems. This review focuses on recent studies conducted on semiconductor-based systems.
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Asoka-Kumar, P. Studies of defects in the near-surface region and at interfaces using low energy positron beams. Bull Mater Sci 20, 391–399 (1997). https://doi.org/10.1007/BF02744747
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DOI: https://doi.org/10.1007/BF02744747