Abstract
Samples of crystalline silicon, porous silicon, gallium arsenide and silicon diodes were exposed to 50–80 MeV silicon and oxygen ions in the fluence range of the order of 1013 to 1014 ions/cm2. The irradiated samples were characterized to obtain information on the relative concentration and depth distribution of the induced defects. For comparison a few silicon diodes and crystalline silicon samples were also exposed to 6 MeV electrons. The main techniques used for the analysis of silicon samples were low angle X-ray diffraction, photo-luminescence spectroscopy and lifetime of minority carriers, whereas diodes were characterized on the basis of switching parameters. It is observed that a large number of defects are produced in the surface region of each of the irradiated semiconductor sample though the energy deposited in the surface region through electronic loss is three orders of magnitude greater than that of nuclear collisions.
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References
Asgekar V B, Bhalla R K, Raye B S, Bhiday M R and Bhoraskar V N 1980Pramana — J. Phys. 15 479
Hansen P, Heitmann H and Smit P H 1982Phys. Rev. B29 3539
Padgaonkár S, Dhole S D and Bhoraskar V N 1991J. Phys. D24 702
Railkar T A, Bhide R S, Bhoraskar S V, Manorama V and Rao V J 1992J. Appl. Phys. 72 155
Railkar T A, Bhoraskar S V, Dhole S D and Bhoraskar V N 1993J. Appl. Phys. 74 4343
Schultz J, Jagadish C, Ridgway M C, Elliman R G and Williams J C 1991Phys. Rev. B44 9118
Zhu Y, Cai Z X, Budhani R C, Suenaga M and Welch D O 1993Phys. Rev. B48 6436
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Bhoraskar, V.N. Irradiation effects in semiconductor. Bull Mater Sci 20, 385–389 (1997). https://doi.org/10.1007/BF02744746
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DOI: https://doi.org/10.1007/BF02744746