Advertisement

Bulletin of Materials Science

, Volume 9, Issue 3, pp 219–223 | Cite as

Preparation and properties of native oxide film anodically grown on Hg0·8Cd0·2Te

  • F R Chavda
  • G Tiwari
  • S C Gupta
Article

Abstract

The process for forming the anodic oxide on Hg0·8Cd0·2Te using a constant voltage d.c. source is studied. The electrolyte is composed of 0·1 N KOH, 90% ethylene glycol and 10% water. Good, uniform, transparent and reproducible films are obtained when the pH of the solution is adjusted between 7 and 8 by using oxalic acid. The anodic oxide film shows an anti-reflection effect. HCl and NH4OH etch the oxide well and give a smooth polished surface of Hg0·8Cd0·2Te.

Keywords

Anodic oxide mercury cadmium telluride pH value native oxide II–VI compounds 

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. Catagnus P C and Baker C T U S 1979 Pat. 3,977,018Google Scholar
  2. Debenham M 1984Appl. Opt. 23 2238CrossRefGoogle Scholar
  3. Dornhaus R and Nimtz G 1983 inSpringer tracts in modern physics (ed.) R Hohler (Berlin: Springer Verlag) vol. 98 p. 119Google Scholar
  4. Ghandhi S K 1983VLSI fabrication principles, silicon and gallium arsenide (New York: John Wiley) p. 371Google Scholar
  5. Gupta S C and Richter H J 1983J. Electrochem. Soc. 130 1469CrossRefGoogle Scholar
  6. Willardson R K and Beer A C 1981Semiconductors and semimetals (New York: Academic Press) vol. 18Google Scholar

Copyright information

© Indian Academy of Sciences 1987

Authors and Affiliations

  • F R Chavda
    • 1
  • G Tiwari
    • 1
  • S C Gupta
    • 1
  1. 1.Solid State Physics LaboratoryDelhiIndia

Personalised recommendations