Spray pyrolytic deposition of CuBiS2 thin films
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Thin films of CuBiS2 have been deposited on glass substrates using spray pyrolysis technique. The effect of substrate temperature on the growth of CuBiS2 thin films is studied in the range of 150 to 400°C. The best quality films are grown at substrate temperature 250°C with 0·1 M composition. Other preparative parameters like spray rate, pressure, height of the solution, etc are optimized with respect to substrate temperature. Some optical and electrical properties of CuBiS2 films are also studied and reported.
KeywordsSpray pyrolysis technique ternary chalcogenide films spray rate
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