Summary
Surface photovoltage (SPV) spectroscopy is discussed with respect to its application for the investigation of semiconductor surfaces. Principles of the method and the experimental equipment are presented. As examples for the study of surface states, recent experimental results on ultrahigh-vacuum (UHV) cleaved surfaces of Ge, Si, GaAs and ZnO are briefly reviewed.
Riassunto
Si discute la spettroscopia di fotovoltaggio di superficie (SPV) riguardo alla sua applicazione allo studio delle superfici dei semiconduttori. Si presentano i principi del metodo e l’apparecchiatura sperimentale. Come esempi di studio degli stati di superficie, si dà una breve rassegna di alcuni recenti risultati sperimentali su superfici di Ge, Si, GaAs e ZnO sfaldate nell’ultravuoto.
Резюме
Исследуется спектроскопия поверхностей полупроводников. Описывается экспериментальная установка. Как примеры исследования поверхностных состояний, анализиуются результаты по изучению очищенных поверхностей Ge, Si, GaAs и ZnO в ультравысоком вакууме.
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Footnotes
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Lüth, H., Heiland, G. Surface photovoltage spectroscopy on semiconductor surfaces. Nuov Cim B 39, 748–758 (1977). https://doi.org/10.1007/BF02725820
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DOI: https://doi.org/10.1007/BF02725820