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Exernally induced band population in narrow-gap semiconductors and their role in electroreflectance

Индуцированная заселенность зон в полупроводниках с узкой щелью и их роль в электроотражении

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Il Nuovo Cimento B (1971-1996)

Summary

In narrow-gap semiconductors such as InSb and InAs portions of the electroreflectance (ER) are a consequence of band population effects. In this paper we show experimentally and theoretically that these effects lead to unexpectedly strong interference and broadening phenomena in the ER spectra, when the space charge region is in heavy accumulation.

Riassunto

Nei semiconduttori a «gap» stretto, come InSb e InAs, alcuni aspetti dell’elettroriflettanza (ER) sono una conseguenza degli effetti di popolazione di banda. In questo lavoro mostriamo sperimentalmente e teoreticamente che questi effetti portano ad un’interferenza inaspettatamente forte e, a fenomeni di allargamento negli spettri di ER quando vi è una forte accumulazione nella regione di carica spaziale.

RuРезюме

В полупроводниках с узкой щелью, таких как InSb и InAs, электроот-ражение является следствием эффектов заселенности зон. В этой статье зкспери-ментально и теоретически показывается, что эти эффекты приводят к неожиданно сильной интерференции и ущирению в спектрах электроотражения, когда происходит аккумулирование пространственного эаряда.

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Footnotes

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Supported by Independent Research funds at NWC.

Traduzione a cura della Redazione.

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Bottka, N., Johnson, D.L. & Glosser, R. Exernally induced band population in narrow-gap semiconductors and their role in electroreflectance. Nuov Cim B 39, 403–408 (1977). https://doi.org/10.1007/BF02725766

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  • DOI: https://doi.org/10.1007/BF02725766

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