Summary
The electronic band structure parameters have been studied in Pb1−x Sn x Te by means of electroreflectance (ER) in the absorbing region and of Faraday rotation in the infra-red transmitting region. Interference effects in Faraday rotation have been investigated theoretically in thin-film samples.
Riassunto
Sono stati studiati i parametri della struttura elettronica a bande nel Pb1−x Sn x Te per mezzo dell’elettroriflettanza (ER) nella regione di assorbimento e della rotazione di Faraday nella regione di trasparenza nell’infrarosso. Gli effetti di interferenza nella rotazione di Faraday sono stati studiati teoricamente in campioni di film sottili.
Резюме
Исследуются параметры электронной зонной структуры в Pb1−x Sn x Te с помощью электроотражения в области поглощения и вращения Фарадея в инфракрасной области. В тонких пленках теоретически изучаются интерференционные эффекты при вращении Фарадея.
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Footnotes
D. E. Aspnes andM. Cardona:Phys. Rev.,173, 714 (1968).
The energy band structure and the assignment of the marks used are the same as shown in ref. (1—3).
P. J. Lin andL. Kleinman:Phys. Rev.,142, 478 (1966).
D. E. Aspnes andJ. E. Rowe:Phys. Rev. Lett.,27, 188 (1971).
H. Piller:Journ. Appl. Phys.,37, 763 (1966).
E. D. Palik, J. R. Stevenson andJ. Webster:Journ. Appl. Phys.,15, 1982 (1966).
T. S. Moss:Optical Properties of Semiconductors (London, 1961).
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Supported by the U.S. Navy (NAVAIR) and LSU Baton Rouge, La.
Traduzione a cura della Redazione.
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Moritani, A., Piller, H. & Khan, S.A. Electroreflectance and faraday rotation in Pb1−x -Sn x Te. Nuov Cim B 39, 392–396 (1977). https://doi.org/10.1007/BF02725764
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DOI: https://doi.org/10.1007/BF02725764