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The stark effect of localized electronic centres

Штарк-эффект локализованных электронных центров

  • Published:
Il Nuovo Cimento B (1971-1996)

Summary

The Stark effect of localized electronic centres is reviewed by using a few selected examples of impurity centres or simple defects. Important information on the symmetry of centres and on the position of energy levels is obtained through the electric-field-induced absorption changes. Typical results are summarized for the Stark effect on the zerophonon lines and on the broad absorption band of point defects in ionic crystals and of impurities in semiconductors.

Riassunto

L’effetto Stark dei centri elettronici localizzati è illustrato attraverso alcuni esempi di centri di impurezze e di difetti semplici. Dalle variazioni di assorbimento ottico indotte da un campo elettrico si possono ottenere importanti informazioni sulla simmetria dei centri e sulla posizione dei livelli energetici. In questo lavoro sono riassunti risultati tipici dell’effetto Stark delle righe a zero fononi, delle larghe bande di assorbimento di difetti puntiformi in cristalli ionici e di impurezze in semiconduttori.

Резюме

Исследуется Штарк-эффект локализованных электронных центров, используя несколько отобранных образцов примесных центров или простых дефектов. Получается важная информация о симметрии центров и положении энергетических уровней, посредством электрического поля, индуцированного абсорбционными превращениями. Типичные результаты обобщаются для Штарк-эффекта на нулевых фононных линиях и на широкой зоне поглощения точечных дефектов в ионных кристаллах и примесях в полупроводниках.

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Author notes

  1. U. M. Grassano

    Present address: Istituto di Fisica dell’Università, Roma, Italia

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    1. U. M. Grassano
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    Additional information

    Work supported by Gruppo Nazionale di Struttura della Materia del Consiglio Nazionale delle Ricerche.

    Перевебено ребакцией.

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    Grassano, U.M. The stark effect of localized electronic centres. Nuov Cim B 39, 368–377 (1977). https://doi.org/10.1007/BF02725761

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