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Electrical properties of Ta2O5 films deposited on ZnO

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Abstract

High dielectric constant (high-k) Ta2O5films have been deposited on ZnO/p-Si substrate by microwave plasma at 150°C. Structure and composition of the ZnO/p-Si films have been investigated by X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) for chemical composition. The electrical properties of the Ta2O5/ZnO/p-Si metal insulator semiconductor (MIS) structures were studied using high frequency capacitance-voltage (C-V), conductance-voltage (G-V) and current-voltage (I-V) characteristics. Charged trapping properties have been studied by measuring the gate voltage shift due to trapped charge generation under Fowler-Nordheim (F-N) constant current stressing.

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Authors and Affiliations

  1. Department of Electronics and ECE, Indian Institute of Technology, 721 302, Kharagpur, India

    S K Nandi, S Chatterjee, S K Samanta, G K Dalapati, P K Bose, S Varma, Shivprasad Patil & C K Maiti

  2. Department of Mechanical Engineering, Jadavpur University, 700 032, Kolkata, India

    P K Bose, S Varma & Shivprasad Patil

Authors
  1. S K Nandi
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  2. S Chatterjee
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  3. S K Samanta
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  4. G K Dalapati
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  5. P K Bose
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  6. S Varma
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  7. Shivprasad Patil
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  8. C K Maiti
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Nandi, S.K., Chatterjee, S., Samanta, S.K. et al. Electrical properties of Ta2O5 films deposited on ZnO. Bull Mater Sci 26, 365–369 (2003). https://doi.org/10.1007/BF02711177

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  • DOI: https://doi.org/10.1007/BF02711177

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