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Bulletin of Materials Science

, Volume 29, Issue 1, pp 15–16 | Cite as

Some spectral response characteristics of ZnTe thin films

  • R. Sarma
  • N. Mazumdar
  • H. L. Das
Semiconductors

Abstract

Zinc telluride thin films have been grown at room temperature and higher temperature substrates by thermal evaporation technique in a vacuum of 10-6 torr. A main peak in the photocurrent is observed at 781 nm (1.58 eV) with two lower amplitude peaks on the lower wavelength side and one on higher wavelength side. The evaluated thermal activation energy is found to correspond well with the main spectral peak. From these studies it can be inferred that temperatures up to 453 K is still in the extrinsic conductivity region of the studied ZnTe thin films.

Keywords

ZnTe thin films photocurrent spectral response 

References

  1. Devore H B 1956Phys. Rev. B102 86CrossRefGoogle Scholar
  2. Kalita P C, Sarma K C and Das H L 1998J. Assam Sci. Soc. 39 117Google Scholar
  3. Kalita P K, Sarma B K and Das H L 1999Indian J. Pure & Appl. Phys. 37 885Google Scholar
  4. Kisiel A, Pukowska B and Tomkowicz W 1976Thin Solid Films 34 399CrossRefGoogle Scholar
  5. Nishio M, Enoki T, Mitsuighi Y, Guo Q and Ogawa H 1999Thin Solid Films 343–344 288Google Scholar
  6. Weast Robert C (ed.) 1977–78CRC Hand book of chemistry and physics (Cleveland, Ohio: CRC Press Inc) 58th ed., p. 101Google Scholar
  7. Winnewisser C, Jepsen P Uhd, Schall M, Schiya V and Helm H 1997Appl. Phys. Lett. 70 3069CrossRefGoogle Scholar

Copyright information

© Indian Academy of Sciences 2006

Authors and Affiliations

  1. 1.Department of PhysicsGauhati UniversityGuwahatiIndia

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