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Bulletin of Materials Science

, Volume 27, Issue 5, pp 445–451 | Cite as

CVD growth and characterization of 3C-SiC thin films

  • A. Gupta
  • D. Paramanik
  • S. Varma
  • C. Jacob
Thin Films

Abstract

Cubic silicon carbide (3C-SiC) thin films were grown on (100) and (111) Si substrates by CVD technique using hexamethyldisilane (HMDS) as the source material in a resistance heated furnace. HMDS was used as the single source for both Si and C though propane was available for the preliminary carbonization. For selective epitaxial growth, patterned Si (100) substrates were used. The effect of different growth parameters such as substrate orientation, growth temperature, precursor concentration, etc on growth was examined to improve the film quality. The surface morphology, microstructure and crystallinity of grown films were studied using optical microscopy, scanning electron microscopy (SEM), X-ray diffraction (XRD) analysis and X-ray photoelectron spectroscopy (XPS).

Keywords

3C-SiC HMDS CVD selective epitaxy 

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Copyright information

© Indian Academy of Sciences 2004

Authors and Affiliations

  • A. Gupta
    • 1
  • D. Paramanik
    • 1
  • S. Varma
    • 1
  • C. Jacob
    • 1
    • 2
  1. 1.Materials Science CentreIndian Institute of TechnologyKharagpurIndia
  2. 2.Institute of PhysicsBhubaneswarIndia

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