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Korean Journal of Chemical Engineering

, Volume 20, Issue 6, pp 1134–1137 | Cite as

Improvement of electrical and optical properties of ingan/ganbased lightemitting diodes with triangular quantum well structure

  • Rak Jun Choi
  • Yoon Bong Hahn
  • Hyun-Wook Shim
  • Eun-Kyung Suh
  • Chang Hee Hong
  • Hyung Jae Lee
Article

Abstract

Substantial improvement of electrical and optical properties of InGaN/GaN multiple quantum wells (MQWs) was obtained with a triangular band structure. Transmission electron microscopy (TEM) images from the–50 nm. The light-emitting diodes (LEDs) with the triangular QWs showed a lower operation voltage, a higher light output power, and higher intensities and narrower line widths of electroluminescence spectra than those with the rectangular QWs. Very bright and uniform light emission from the triangular MQW LEDs was also observed at a low injection current, but spatially non-uniform emission from the rectangular ones.

Key words

InGaN/GaN Quantum Well Structures Light-emitting Diodes 

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References

  1. Choi, R. J., Hahn, Y. B., Shim, H. W., Han, M. S., Suh, E. K. and Lee, H. J., “Efficient Blue Light-Emitting Diodes with InGaN/GaN Triangular Shaped Multiple Quantum Wells”Appl. Phys. Lett.,82,2764 (2003).CrossRefGoogle Scholar
  2. Crowell, P. A., Yong, D. K., Keller, S., Hu, E. L. and Awschalom, D. D., “Near-field Scanning Optical Spectroscopy of an InGaN Quantum Well,”Appl. Phys. Lett.,72, 927 (1998).CrossRefGoogle Scholar
  3. Hahn, Y B., Choi, R. I, Hong, J. H., Park, H. J. and Lee, H. I, “High-Density Plasma-Induced Etch Damage of InGaN/GaN Multiple Quantum Well Light-Emitting Diodes,”J. Appl. Phys.,92, 1189 (2002).CrossRefGoogle Scholar
  4. Hahn, Y. B. and Pearton, S. J., “Global Self-Consistent Model of an Inductively Coupled Plasma Etching System,”Korean J. Chem. Eng.,17, 304 (2000).CrossRefGoogle Scholar
  5. Im, Y. H., Choi, C. S. and Hahn, Y B., “High Density Plasma Etching of GaN Films in Cl/Ar Discharges with a Low-Frequency-Excited DC Bias,”J. Korean Physical Society,39(4), 617 (2001).Google Scholar
  6. Im, Y. H. and Hahn, Y B., “Heat Transfer between Wafer and Electrode in a High Density Plasma Etcher,”Korean J. Chem. Eng.,19, 347 (2002).CrossRefGoogle Scholar
  7. Im, J. S., Kollmer, H., Off, J., Sohmer, A., Scholz, F. and Hangleiter, A., “Reduction of Oscillator Strength due to Piezoelectric Fields in GaN/ AlxGa1-xN Quantum Wells,”Phys. Rev. B,57, R9435 (1998).CrossRefGoogle Scholar
  8. Jeong, M. S, Kim, J. Y., Kim, Y-W, White, J. O., Suh, E. K., Hong, C.-H. and Lee, H. J., “Spatially Resolved Photoluminescence in InGaN/GaN Quantum Wells by Near-field Scanning Optical Spectroscopy,”Appl. Phys. Lett.,79,976 (2001)CrossRefGoogle Scholar
  9. Nakamura, S., “Current Status and Future Prospects of InGaN-Based Laser Diodes,”Jpn SocAppl. Phys. Int., No. 1, 5 (2000).Google Scholar
  10. Nakamura, S., Senoh, M., Nagahama, S., Iwasa, N, Yamada, T, Kiyoku, H, Sugimoto, Y., Kozaki, T., Umemoto, H, Sano, M. and Chocho, K.,Jpn. J. Appl. Phys., Part 2 36, L1568 (1997).CrossRefGoogle Scholar
  11. Wang, T., Bai, J. and Sakai, S., “Investigation of the Emission Mechanism in InGaN/GaN-Based Light-Emitting Diodes,”Appl. Phys. Lett.,78, 2617 (2001).CrossRefGoogle Scholar

Copyright information

© Korean Institute of Chemical Engineering 2003

Authors and Affiliations

  • Rak Jun Choi
    • 1
  • Yoon Bong Hahn
    • 2
  • Hyun-Wook Shim
    • 1
    • 2
  • Eun-Kyung Suh
    • 1
    • 2
  • Chang Hee Hong
    • 1
    • 2
  • Hyung Jae Lee
    • 1
    • 2
  1. 1.School of Chemical Engineering and TechnologyChonbuk National UniversityChonjuKorea
  2. 2.Semiconductor Physics Research Center and Department of Semiconductor Science and TechnologyChonbuk National UniversityChonjuKorea

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