Abstract
Substantial improvement of electrical and optical properties of InGaN/GaN multiple quantum wells (MQWs) was obtained with a triangular band structure. Transmission electron microscopy (TEM) images from the–50 nm. The light-emitting diodes (LEDs) with the triangular QWs showed a lower operation voltage, a higher light output power, and higher intensities and narrower line widths of electroluminescence spectra than those with the rectangular QWs. Very bright and uniform light emission from the triangular MQW LEDs was also observed at a low injection current, but spatially non-uniform emission from the rectangular ones.
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Choi, R. J., Hahn, Y. B., Shim, H. W., Han, M. S., Suh, E. K. and Lee, H. J., “Efficient Blue Light-Emitting Diodes with InGaN/GaN Triangular Shaped Multiple Quantum Wells”Appl. Phys. Lett.,82,2764 (2003).
Crowell, P. A., Yong, D. K., Keller, S., Hu, E. L. and Awschalom, D. D., “Near-field Scanning Optical Spectroscopy of an InGaN Quantum Well,”Appl. Phys. Lett.,72, 927 (1998).
Hahn, Y B., Choi, R. I, Hong, J. H., Park, H. J. and Lee, H. I, “High-Density Plasma-Induced Etch Damage of InGaN/GaN Multiple Quantum Well Light-Emitting Diodes,”J. Appl. Phys.,92, 1189 (2002).
Hahn, Y. B. and Pearton, S. J., “Global Self-Consistent Model of an Inductively Coupled Plasma Etching System,”Korean J. Chem. Eng.,17, 304 (2000).
Im, Y. H., Choi, C. S. and Hahn, Y B., “High Density Plasma Etching of GaN Films in Cl/Ar Discharges with a Low-Frequency-Excited DC Bias,”J. Korean Physical Society,39(4), 617 (2001).
Im, Y. H. and Hahn, Y B., “Heat Transfer between Wafer and Electrode in a High Density Plasma Etcher,”Korean J. Chem. Eng.,19, 347 (2002).
Im, J. S., Kollmer, H., Off, J., Sohmer, A., Scholz, F. and Hangleiter, A., “Reduction of Oscillator Strength due to Piezoelectric Fields in GaN/ AlxGa1-xN Quantum Wells,”Phys. Rev. B,57, R9435 (1998).
Jeong, M. S, Kim, J. Y., Kim, Y-W, White, J. O., Suh, E. K., Hong, C.-H. and Lee, H. J., “Spatially Resolved Photoluminescence in InGaN/GaN Quantum Wells by Near-field Scanning Optical Spectroscopy,”Appl. Phys. Lett.,79,976 (2001)
Nakamura, S., “Current Status and Future Prospects of InGaN-Based Laser Diodes,”Jpn SocAppl. Phys. Int., No. 1, 5 (2000).
Nakamura, S., Senoh, M., Nagahama, S., Iwasa, N, Yamada, T, Kiyoku, H, Sugimoto, Y., Kozaki, T., Umemoto, H, Sano, M. and Chocho, K.,Jpn. J. Appl. Phys., Part 2 36, L1568 (1997).
Wang, T., Bai, J. and Sakai, S., “Investigation of the Emission Mechanism in InGaN/GaN-Based Light-Emitting Diodes,”Appl. Phys. Lett.,78, 2617 (2001).
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Choi, R.J., Hahn, Y.B., Shim, HW. et al. Improvement of electrical and optical properties of ingan/ganbased lightemitting diodes with triangular quantum well structure. Korean J. Chem. Eng. 20, 1134–1137 (2003). https://doi.org/10.1007/BF02706949
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DOI: https://doi.org/10.1007/BF02706949