Improvement of electrical and optical properties of ingan/ganbased lightemitting diodes with triangular quantum well structure
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Substantial improvement of electrical and optical properties of InGaN/GaN multiple quantum wells (MQWs) was obtained with a triangular band structure. Transmission electron microscopy (TEM) images from the–50 nm. The light-emitting diodes (LEDs) with the triangular QWs showed a lower operation voltage, a higher light output power, and higher intensities and narrower line widths of electroluminescence spectra than those with the rectangular QWs. Very bright and uniform light emission from the triangular MQW LEDs was also observed at a low injection current, but spatially non-uniform emission from the rectangular ones.
Key wordsInGaN/GaN Quantum Well Structures Light-emitting Diodes
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