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Korean Journal of Chemical Engineering

, Volume 20, Issue 4, pp 653–658 | Cite as

Catalytic effect of metal elements on the growth of GaN and Mg-doped GaN micro-crystals

  • Kee Suk Nahm
  • Tae Yun Kim
  • Sang Hyun Lee
Article

Abstract

Catalytic effect of metal elements was observed in the growth of GaN and Mg-doped GaN micro-crystals. High quality GaN micro-crystals were synthesized by direct reaction of gallium and ammonia using a Ni-mesh catalyst. Mg-doped GaN micro-crystals were also grown by the same reaction scheme in the presence of MgCl2. The growth rate of GaN micro-crystals markedly increased in the presence of the catalyst. The average grain size of GaN microcrystals synthesized in the presence of Ni and Mg metals was larger than that in the absence of the metals. The characterization of the catalytically grown GaN micro-crystals using transmission electron microscopy and X-ray and/or electron diffraction pattern showed the growth of dislocation free hexagonal GaN micro-crystals. Photoluminescence (PL) and Catholuminescence (CL) measurements also showed the growth of good quality n-and p-type GaN microcrystals using Ni catalyst

Key words

GaN Mg-doped Micro-crystal Vertical CVD Reactor Metal Catalyst 

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References

  1. Akasaki, I. and Amano, H., “Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light Emitters”,Jpn. J. Appl. Phys., 36, 5393 (1997).CrossRefGoogle Scholar
  2. Aujol, E., Trassoudaine, A., Castelluci, D. and Cadoret, R., “Influence of the Partial Pressure of GaCl3 in the Growth Process of GaN by HVPE Under Nitrogen”,Mat. Sci. Eng.,B82, 65 (2001).Google Scholar
  3. Ban, V. S., “Mass Spectrometric Studies of Vapor-phase Crystal Growth”,J. Electrochem. Soc.,119, 761 (1972).CrossRefGoogle Scholar
  4. Bassignana, I. C., Wagemann, K., Kuppers, J. and Ertl, G., “Adsorption and Thermal Decomposition of Ammonia on a Ni(110) Surface: Isolation and Identification of Adsorbed NH2 and NH”,Surf. Sci.,175, 22 (1986).CrossRefGoogle Scholar
  5. Cadoret, R., “Growth Mechanisms of (0-0.1)GaN Substrates in the Hydride Vapour-phase Method: Surface Diffusion, Spiral Growth, H2 and GaCl3 Mechanisms”,J. Crystal Growth, 205, 123 (1999).CrossRefGoogle Scholar
  6. Chen, C. C., Yeh, C. C., Chen, C. H., Yu, M. Y., Liu, H. L., Wu, J. J., Chen, K. H., Chen, L. C., Peng, J. Y. and Chen, Y. F., “Catalytic Growth and Characterization of Gallium Nitride Nanowires”,J. Am. Chem. Soc.,123, 2791 (2001).CrossRefGoogle Scholar
  7. Cherns, D., Young, W. T., Steeds, J. W., Ponce, F. A. and Nakamura, S., “Observation of Coreless Dislocations in α-GaN”,J. Cryst. Growth,178, 201 (1997).CrossRefGoogle Scholar
  8. Cho, J., Kim, S. and Char, K., “Fabrication of Highly Ordered Multi-layer Thin Films and Its Applications”,Korean J. Chem. Eng.,20, 174 (2003).CrossRefGoogle Scholar
  9. Chrysostomou, D., Flowers, J. and Zaera, F, “The Thermal Chemistry of Ammonia on Ni(110)”,Surf. Sci.,439, 34 (1999).CrossRefGoogle Scholar
  10. Goodwin, T. J., Leppert, V. J., Risbud, S. H., Kennedy, I. M. and Lee, H. W. H., “Synthesis of Gallium Nitride Quantum Dots Through Reactive Laser Ablation”,Appl. Phys. Lett.,70, 3122 (1997).CrossRefGoogle Scholar
  11. Gross, M., Henn, G, Ziegler, J., Auenspacher, P., Cychy, C. and Schroder, H., “Characteristics of Undoped and Magnesium Doped GaN Films Grown by Laser Induced MBE”Mater. Sci. Eng.,B59, 94 (1999).CrossRefGoogle Scholar
  12. Ha, J. S., Park, K. H. and Park, K. W., “STM Investigation of Nano-structures Fabricated on Passivated Si Surfaces”Korean J. Chem. Eng., 20, 169 (2003).CrossRefGoogle Scholar
  13. Jeong, S. M., Shim, H. W., Yoon, H. S., Cheong, M. G., Choi, R. J., Suh, E.-K. and Lee, H. J., “Two Different Behavior Patterns of Photoluminescence Depending on Mg Doping Rate in p-type GaN Epilayers”,J. Appl. Phys.,91, 9711 (2002).CrossRefGoogle Scholar
  14. Kamp, M., Mayer, M., Pelzman, A. and Ebeling, K. J., “Fundamentals, Material Properties and Device Performances in GaN MBE using On-Surface Cracking of Ammonia”,J. Nitride Semiconductor Research, 2, 26 (1997).Google Scholar
  15. Kanie, H., Kawano, T., Sugimoto, K. and Kawai, R., “Photoluminescence Excitation Spectrum of Undoped and Zn Doped InGaN Microcrystals”, Proc. Int. Workshop on Nitride Semiconductors, IPAP Conf., Series1, 606 (2000).Google Scholar
  16. Kataoka, F., Satoh, Y, Suda, Y, Honda, K. and Toki, H., “Blue Phosphor GaN: Zn for VFDs and FEDs”, Physics & Chemistry of luminescent materials, ECS 17 (1999).Google Scholar
  17. Kibria, A. K., Fazle, M., Mo, Y. H. and Yun, M. H., “Effects of Bimetallic Catalyst Composition and Growth Parameters on the Growth Density and Diameter of Carbon Nanotubes”,Korean J. Chem. Eng.,18, 208 (2001).CrossRefGoogle Scholar
  18. Kim, J. R., So, H. M., Park, J. W. and Kim, “Electrical Transport Properties of Individual Gallium Nitride Nanowires Synthesized by Chemical-vapor-deposition”,Appl. Phys. Lett., 80, 3548 (2002).CrossRefGoogle Scholar
  19. Klauber, C., Alvey, M. D. and Yates, J. T. Jr., “NH3 Adsorption on Ni(110) and the Production of the NH2 Species by Electron Irradiation”,Surf. Sci., 154, 139 (1985).CrossRefGoogle Scholar
  20. Kurai, S., Abe, T., Naoi, Y. and Sakai, S., “Growth and Characterization of Thick GaN by Sublimation Method and Homoepitaxial Growth by Metalorganic Chemical Vapor Deposition”Jpn. J. Appl. Phys., 35, 1637 (1996).CrossRefGoogle Scholar
  21. Lachab, M., Youn, D. H., Fareed, R. S. Q., Wang, T. and Sakai, S., “Characterization of Mg-doped GaN Grown by Metalorganic Chemical Vapor Deposition”,Solid-State Electronics, 44, 1669 (2000).CrossRefGoogle Scholar
  22. Lee, H. and Harris, J. S. Jr., “Vapor Phase Epitaxy of GaN using GaCl3/ N2 and NH3/N2”,J. Crystal Growth,169, 689 (1996).CrossRefGoogle Scholar
  23. Li, H. D., Yang, H. B., Zou, G. T., Yu, S., Lu, J. S., Qu, S. C. and Wu, Y. J., “Formation and Photoluminescence Spectrum of w-GaN Powdef”,J. Crystal Growth,171, 307 (1997).CrossRefGoogle Scholar
  24. Liu, S. S. and Stevenson, D. A., “Growth Kinetics and Catalytic Effects in the Vapor Phase Epitaxy of Gallium Nitride”J. Electrochem. Soc., 125, 1161 (1978).CrossRefGoogle Scholar
  25. McMurran, J., Kouvetakis, J., Nesting, D. C., Smith, D. J. and Hubbard, J. L., “Formation of a Tetrameric, Cyclooctane-like, Azidochlorogallane, [HClGaN3]3 and Related Azidogallanes. Exothermic Single-Source Precursors to GaN Nanostructures”,J. Am. Chem. Soc,120, 5233 (1998).CrossRefGoogle Scholar
  26. Nahm, K. S., Mo, Y. H. and Shajahan, M., “Catalytic Growth of Semi-conductor Micro- and Nano-crystals using Transition Metal Catalysts”,Korean J. Chem. Eng., 19, 510 (2002).CrossRefGoogle Scholar
  27. Nahm, K. S., Yang, S. H. and Ahn, S. H., “Structural and Optical Characterization of Thick GaN Films Grown by the Direct Reaction of Metal Ga and NH3 in CVD Reactor”,Korean J. Chem. Eng., 17, 105 (2000).Google Scholar
  28. Park, Y. J., Son, M. H., Kim, E. K. and Min, S. K., “Formation of GaN Micro-Crystals by the Direct Reaction of NH3 with a Ga-Melt”,J. Kor. Phys. Soc.,32, 621 (1998).Google Scholar
  29. Porowdki, S., “High Pressure Growth of GaN-New Prospects for Blue Lasers”,J. Crystal Growth, 166, 583 (1996).CrossRefGoogle Scholar
  30. Porowski, S., “Bulk and Homoepitaxial GaN-growth and Characterization”,J. Crystal Growth, 189/190, 153 (1998).CrossRefGoogle Scholar
  31. Roh, C. H., Park, Y. J., Kim, E. K. and Shim, K. B., “The Effect of Metallic Catalysts on the Synthesis of GaN Micro-crystals”,J. Crystal Growth,237/239, 926 (2002).CrossRefGoogle Scholar
  32. Shibata, M., Furuya, T., Sakaguchi, H. and Kuma, S., “Synthesis of Gallium Nitride by Ammonia Injection into Gallium Melt”,J. Crystal Growth, 196, 47 (1999).CrossRefGoogle Scholar
  33. Smith, M., Chen, G. D., Lin, J. Y., Jiang, H. X., Salvador, A., Sverdlov, B. N., Botchkarev, A., Morkoc, H. and Goldenberg, B., “Mechanisms of Band-edge Emission in Mg-doped p-type GaN”,Appl. Phys. Lett., 68, 1883 (1996).CrossRefGoogle Scholar

Copyright information

© Korean Institute of Chemical Engineering 2003

Authors and Affiliations

  1. 1.School of Chemical Engineering and TechnologyChonbuk National UniversityChonjuRepublic of Korea

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