Korean Journal of Chemical Engineering

, Volume 14, Issue 2, pp 136–140 | Cite as

Metalorganic chemical vapor deposition of ferroelectric Pb(ZrxTi1- xO3thin films

  • Chee Won Chung
  • Daesig Kim


Ferroelectric Pb(ZrxTi1-x)O3 (PZT) thin films were successfully deposited on Pt/Ti/SiO2Si substrates by metalorganic chemical vapor deposition (MOCVD). Pb(C2H5)4, Zr(O-t-C4H9)4, and Ti(O-i-C3H7)4 were used as metalorganic precursors. Variations in crystalline structure, surface morphology, and grain size of deposited films were systematically investigated as a function of process parameters by using X-ray diffraction and scanning electron microscopy. The deposition temperature and gas composition in the reactor are the main parameters that control the microstructure and composition of films. An interrelationship between the grain orientation and surface roughness of the films was found. Films with (111) preferred orientation are significantly smoother than films with other preferred orientations. The ferroelectric properties of the films were also measured by RT66A ferroelectric tester for hysteresis loop and fatigue property. Electrical measurements revealed that the films had good ferroelectric characteristics with the high remanant polarization (32 μC/cm2) and low coercive voltage (1.1 V).

Key words

MOCVD PZT Thin Film Ferroelectric FRAM 


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Copyright information

© Korean Institute of Chemical Engineering 1997

Authors and Affiliations

  • Chee Won Chung
    • 1
  • Daesig Kim
    • 1
  1. 1.Electronic Materials Lab., Materials SectorSamsung Advanced Institute of TechnologySuwonKorea

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