Remote plasma enhanced metal organic chemical vapor deposition of TiN for diffusion barrier
- 47 Downloads
TiN films were deposited with remote plasma metal organic chemical vapor deposition (MOCVD) from tetrakis-diethyl-amido-titanium (TDEAT) at substrate temperature of 250–500°C and plasma power of 20–80 W. The growth rate using N2 plasma is slower than that with H2 plasma and showed 9.33 kcal/mol of activation energy. In the range of 350–400°C., higher crystallinity and surface roughness were observed and resistivity was relatively low. As the temperature increased to 500°C., randomely oriented structure and smooth surface with higher resistivity were obtained. At low deposition temperature, carbon was incorporated as TiC phase, as the deposition temperature increases, carbon was found as hydrocarbon. At 40 W of plasma power, higher crystallinity and rough surface with lower resistivity were obtained and increasing the plasma power to 80 W leads to low crystallinity, smooth surface and higher resistivity. It may be due to the incorporation of hydrocarbon decomposed in the gas phase. Surface roughness was found to be related to the crystallinity of the film.
Key wordsMOCVD TiN TDEAT Plasma Diffusion Barrier
Unable to display preview. Download preview PDF.
- Roberts, B., Harrus, A. and Jackson, R. L., Interconnect Metallization for Future Device Generation,Solid State Technol.,Feb., 69 (1995).Google Scholar