Korean Journal of Chemical Engineering

, Volume 13, Issue 5, pp 510–514 | Cite as

Remote plasma enhanced metal organic chemical vapor deposition of TiN for diffusion barrier

  • Ju-Young Yun
  • Shi-Woo Rhee


TiN films were deposited with remote plasma metal organic chemical vapor deposition (MOCVD) from tetrakis-diethyl-amido-titanium (TDEAT) at substrate temperature of 250–500°C and plasma power of 20–80 W. The growth rate using N2 plasma is slower than that with H2 plasma and showed 9.33 kcal/mol of activation energy. In the range of 350–400°C., higher crystallinity and surface roughness were observed and resistivity was relatively low. As the temperature increased to 500°C., randomely oriented structure and smooth surface with higher resistivity were obtained. At low deposition temperature, carbon was incorporated as TiC phase, as the deposition temperature increases, carbon was found as hydrocarbon. At 40 W of plasma power, higher crystallinity and rough surface with lower resistivity were obtained and increasing the plasma power to 80 W leads to low crystallinity, smooth surface and higher resistivity. It may be due to the incorporation of hydrocarbon decomposed in the gas phase. Surface roughness was found to be related to the crystallinity of the film.

Key words

MOCVD TiN TDEAT Plasma Diffusion Barrier 


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.


  1. Charatan, R. M., Gross, M. E. and Eaglesham, D. J.,“Plasma Enhanced Chemical Vapor Deposition of Titanium Nitride Thin Films Using Cyclopentadienyl Cyclopentatrienyl Titanium”,J. Appl. Phys.,76(7), 1, 4377 (1994).CrossRefGoogle Scholar
  2. Coneille, J. S.. Chen, P. J., Truong, C. M., Oh, W. S. and Goodman, D. W., Surface Spectroscopic Studies of the Deposition of TiN Films from Tetrakis-dimethyl-amido-titanium and Ammonia,J. Vac. Sci. Technol. A,13(3), 1116 (1995).CrossRefGoogle Scholar
  3. Harper, J. M. E., Hornstrom, S. E. and Thomas, O. and Charai, A., “Mechanisms for Success or Failure of Diffusion Barriers between Aluminium and Silicon,J. Vac. Sci. Technol. A,7(3), 875 (1989).CrossRefGoogle Scholar
  4. Ianno, N. J., Amed, A. U. and Englebert, D. E.,“Plasma Enhanced Chemical Vapor Deposition of TiN from TiCl4/N2/H2 Gas Mixtures”,J. Electrochem. Soc,136(1), 276 (1990).CrossRefGoogle Scholar
  5. Ishihara, K., Yarnazaki, K. and Hamada, H.,“Characterization of CVD-TiN Films Prepared with Metalorganic Source”,Jap. J. Appl. Phys.,29(10), 2103 (1990).CrossRefGoogle Scholar
  6. Kulisch, W., Remote Plasma Enhanced Chemical Vapor Deposition with Metal Organic Source Gases”,Surface Coating Technology,59, 1993 (1993).CrossRefGoogle Scholar
  7. Lawrence, H. and Bernard, R. Z., Infrared Studies of the Surface and Gas Phase Reactions Leading to the Growth of Titanium Nitride Thin Films from Tetrakis-dimethyl-amido-titanium and Ammonia”,J. Electrochem. Soc,139(12), 3603 (1992).CrossRefGoogle Scholar
  8. Manory, R. R.,“Post Deposition Treatment of TiNx, Part 1: Effects of Annealing on the Structure of Nitrogen-rich Films”,Surface Coating Technology,63, 85 (1994).CrossRefGoogle Scholar
  9. Price, J. B., Borland, O. and Selbred, S., “Properties of Chemical Vapor Deposited Titanium Nitride,Thin Solid Films,236, 311 (1993).CrossRefGoogle Scholar
  10. Prybyla, J. A., Chang, C. M. and Dubois, L. H.,“Investigation of the Growth of TiN Thin Films from Ti(NMe2)4,J. Electrochem. Soc,140(9), 2695 (1993).CrossRefGoogle Scholar
  11. Raajimakers, I. J.,“Low Temperature Metal Organic Chemical Vapor Deposition of Advanced Barrier Layers for the Microelectronics Industry”,Thin Solid Films,247, 85 (1994).CrossRefGoogle Scholar
  12. Roberts, B., Harrus, A. and Jackson, R. L., Interconnect Metallization for Future Device Generation,Solid State Technol.,Feb., 69 (1995).Google Scholar
  13. Sherman, A.,“Growth and Properties of LPCVD Titanium Nitride as a Diffusion Barrier for Device Technology,J. Electrochem. Soc,137(6), 1892 (1990).CrossRefGoogle Scholar
  14. Sun, S. C. and Tsai, M. H.,“Comparison of Chemical Vapor Deposition of TiN Using Tetrakis-dimethyl-amido-titanium and Tetrakis-diethyl-amido-titanium,Thin Solid Films,253, 440 (1994).CrossRefGoogle Scholar
  15. Travis, E. O. and Fiordalice, R. W., Manufacturing Aspects of Low Pressure Chemical Vapor Deposited TiN Barrier Layers”,Thin Solid Films,236, 325 (1993).CrossRefGoogle Scholar

Copyright information

© Korean Institute of Chemical Engineering 1996

Authors and Affiliations

  • Ju-Young Yun
    • 1
  • Shi-Woo Rhee
    • 1
  1. 1.Laboratory for Advanced Materials Processing (LAMP) Department of Chemical EngineeringPohang University of Science and Technology (POSTECH)PohangKorea

Personalised recommendations