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Korean Journal of Chemical Engineering

, Volume 13, Issue 5, pp 473–477 | Cite as

Preparation and characterization of TiO2 thin films by PECVD on Si substrate

  • In-Sun Lee
  • Jong-Wha Kim
  • Chang-Joo Youn
  • Sang-Kyu Park
  • Yoon-Bong Hahn
Article

Abstract

Titanium oxide thin films were prepared on p-Si(l00) substrate by plasma enhanced chemical vapor deposition using high purity titanium isopropoxide and oxygen. The deposition rate was little affected by oxygen flow rate, but significantly affected by RF power, substrate temperature, carrier gas flow rate, and chamber pressure. Morphology of the film became coarser with increasing deposition time and chamber pressure, and the film showed less uniformity at high deposition rates. It was also found that the overall deposition process is controlled by heterogeneous surface reaction below 200°C., but controlled by mass transfer of reactants at higher temperatures. TiO2 films deposited at temperatures lower than 400°C was amorphous, but showed the anatase crystalline structure upon 400°C deposition. The dielectric constant was about 47 for the films post-treated by rapid-thermal annealing (RTA) at 800°C. The leakage current was about 2×10−5 A/cm2 for the films deposited at 400°C and RTA-treated at 600°C. However, it was decreased to less than 3×10−7 A/cm2 for the film RTA-treated at 800°C.

Key words

Titanium Oxide Thin Films PECVD Deposition Rate RTA Leakage Current 

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References

  1. Choi, S. J., Lee, Y. E., Cho, H. S. and Kim, H. J.,“Characterization of Structure and Electrical Properties of TiO2 Thin Films Deposited by MOCVD,Korean J. Materials Research,5, 3 (1995).Google Scholar
  2. Frenck, H. J., Kulisch, W., Kuhr, M. and Kassing, R.,“Deposition of TiO2 Thin Films by Plasma-Enhanced Decomposition of Tetraisopropyltitanate”,Thin Solid Films,201, 327 (1991).CrossRefGoogle Scholar
  3. Fuyuki, T. and Matsunami, H.,“Electronic Properties of the Interface between Si and TiO2 Deposited at Very Low Temperatures”,Japan J. Appl. Phys.,25, 1288 (1986).CrossRefGoogle Scholar
  4. Ghoshtagore, R. N. and Noreika, A. J.,“Growth Characteristics of Rutile Film by CVD”,J. Electrochem. Soc,117, 1310 (1970).CrossRefGoogle Scholar
  5. Jeon, B. S., Lee, J. K., Park, D. and Shin, S.-H.,“Preparation of Large Area TiO3 Thin Films by Low Pressure Chemical Vapor Deposition,Korean J. Materials Research,4, 861 (1994).Google Scholar
  6. Lee, W. G., Woo, S. I., Kim, J. C., Choi, S. H. and Oh, K. H., Preparation and Properties of Amorphous TiO2 Thin Films by Plasma Enhanced Chemical Vapor Deposition”,Thin Solid Films,215, 1 (1993).Google Scholar
  7. Rausch, N. and Burte, E. P.,“Thin TiO2 Films Prepared by Low Pressure Chemical Vapor Depositioin,J. Electrochem. Soc,140, 145 (1993).CrossRefGoogle Scholar
  8. Siegering, K. L. and Griffin, G. L., Kinetics of Low Pressure Chemical Vapor Deposition of TiO2 from Titanium Tetraisopropoxide”,J. Electrochem. Soc,137, 814 (1990).CrossRefGoogle Scholar
  9. Takahashi, Y., Tsuda, K., Sugiyama, K., Minoura, H., Makino, D. and Tsuiki, M.,“Chemical Vapor Deposition of TiO2 Film Using an Organometallic F’rocess and Its Photoelectrochemical Behavior,J. Chem. Soc. Faraday Trand. fnst.,77, 1051 (1981).CrossRefGoogle Scholar
  10. Takahashi, Y., Suzuki, H. and Nasu, M., Rutile Growth and TiO2 Films Deposited Isopropyl Titanate,J. Chem. Soc. Faraday Trand. Inst,81, 3117 (1985).CrossRefGoogle Scholar
  11. Williams, L. M. and Hess, D. W., Structural Properties of Titanium Dioxide Films Deposited in an RF Glow Discharge,Thin Solid Films,115, 13 (1984).CrossRefGoogle Scholar
  12. Won, T. K., Yoon, S. G. and Kim, H. G., Compositional Analysis and Capacitance-Voltage Properties of TiO2 Films by Low Pressure Metal — Organic Chemical Vapor Deposition,J. Electrochem. Soc,139, 3284 (1993).CrossRefGoogle Scholar

Copyright information

© Korean Institute of Chemical Engineering 1996

Authors and Affiliations

  • In-Sun Lee
    • 1
    • 3
  • Jong-Wha Kim
    • 1
  • Chang-Joo Youn
    • 1
    • 2
  • Sang-Kyu Park
    • 1
    • 4
  • Yoon-Bong Hahn
    • 1
  1. 1.School of Chemical Engineering and TechnologyChonbuk National UniversityKorea
  2. 2.Department of Semiconductor Physics, Semiconductor Physics Research CenterChonbuk National UniversityChonjuKorea
  3. 3.LG Semicon Co., Ltd.CheongjuKorea
  4. 4.Korea Accelerator and Plasma Research Association, Department of Nuclear EngineeringSeoul National UniversitySeoulKorea

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