Abstract
Titanium oxide thin films were prepared on p-Si(l00) substrate by plasma enhanced chemical vapor deposition using high purity titanium isopropoxide and oxygen. The deposition rate was little affected by oxygen flow rate, but significantly affected by RF power, substrate temperature, carrier gas flow rate, and chamber pressure. Morphology of the film became coarser with increasing deposition time and chamber pressure, and the film showed less uniformity at high deposition rates. It was also found that the overall deposition process is controlled by heterogeneous surface reaction below 200°C., but controlled by mass transfer of reactants at higher temperatures. TiO2 films deposited at temperatures lower than 400°C was amorphous, but showed the anatase crystalline structure upon 400°C deposition. The dielectric constant was about 47 for the films post-treated by rapid-thermal annealing (RTA) at 800°C. The leakage current was about 2×10−5 A/cm2 for the films deposited at 400°C and RTA-treated at 600°C. However, it was decreased to less than 3×10−7 A/cm2 for the film RTA-treated at 800°C.
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Lee, IS., Kim, JW., Youn, CJ. et al. Preparation and characterization of TiO2 thin films by PECVD on Si substrate. Korean J. Chem. Eng. 13, 473–477 (1996). https://doi.org/10.1007/BF02705996
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DOI: https://doi.org/10.1007/BF02705996