Abstract
Epitaxial layers of silicon are grown on single crystal Si- substrate from a solution of silicon in indium using conventional graphite slider boat technique. The important problems of natural convection due to lower density of silicon compared to indium,poor wetting of substrate due to high angle of contact of indium solution on silicon substrate resulting in poor nucleation, melt removal from the growth substrate and saturation wafer associated with LPE in this technique are practically eliminated using sandwich method with simple modifications of the boat and the method of growth. Some experimental studies on the effect of different surface preparations of growth substrate are also reported. Growth results are shown and discussed. Further, improvization of slider boat to facilitate better study of growth parameters is suggested in the line of modification already carried out.
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References
Astle M G 1990 inLiquid-phase epitaxial growth of III–V com- pound semiconductors Bristol: IOP Pub. Ltd. 37, 42, 67
Baliga B J 1977J. Electrochem. Soc. 124 1627
Baliga B J 1986 inEpitaxial silicon technology (London: Academic Press Inc. Ch. 3, 182–183
Ballhorn G, Weber K J, Armand S, Stocks M J and Blakers A W 1998Sol. Energy Mater. and Sol. Cells 52 61
Beck F 1998Integrated circuit failure analysis: A guide to pre- paration techniques West Sussex, England: John Wiley & Sons Ltd.) 52 (Translation: S S Wilson)
Bergmann R 1991J. Cryst. Growth 110 823
Bergmann R and Kurianski J 1993Mater. Letts 17 137
Bergmann R, Robinson S, Shi Z and Kurianski J 1993Sol. Energy Mater. and Sol. Cells 31 447
Blakers A W, Werner J H, Bauser E and Queisser H J 1992Appl. Phys. Lett. 60 2752
Chatterjee S, Majumdar D, Gangopadhyay U and Saha H 2001Characterization and defect studies of LPE layers of silicon grown on substrates undergoing various surface treatments, Crystal growth and characterization, Proc. int. workshop prep. & charac. tech. imp. single crystals (eds) S K Gupta, S K Halder and G Bhagvannarayana (New Delhi: NPL) 532–536
Ciszek T F, Wang T H, Wu X, Burrows R W, Alleman J, Schwerdtfeger C R and Bekkedahl T 1993Conference record of 23rd IEEE PVSC (Louisville: IEEE Electron Devices Society) p. 65
Dawson L R 1974J. Cryst. Growth 27 86
Donnelly P and Milness A G 1966J. Electrochem. Soc. 113 297
Friedrich J A, Neudeck G W and Liu S T 1988Appl. Phys. Lett. 53 2543
Ghez R and Lew L S 1973J. Cryst. Growth 20 273
Girult B, Chevrier F, Joullie A and Bougnot G 1977J. Cryst. Growth 37 169
Kanai H, Kimura M, Tanaka A and Sukegawa T 1996J. Cryst. Growth 160 229
Kern W 1990J. Electrochem. Soc. 137 1887
Kimura M, Tanaka A and Sukegawa T 1991Appl. Surf. Sci. 48/ 49 185
Kimura M, Dijilali N and Dost S 1994J. Cryst. Growth 143 334
Kimura M, Dijilali N, Dost S, Kanai H, Tanaka A and Suke- gawa T 1996J. Cryst. Growth 167 516
Konuma M, Czech E, Silier I and Bauser E 1993Appl. Phys. Lett. 63 205
Konuma M, Hafendorfer M, Czech E, Silier I, Bauser E, Traxler A and Schweitzer G 1994aCentrifuge for solution growth of semiconductor layers: An application of magnetic bearings, Proc. 4th int. symp. on magnetic bearings ETH Zurich: Vdf Hochsctru Verlag A Gander) pp 171–176
Konuma M, Silier I, Czech E and Bauser E 1994bSol. Energy Mater. and Sol. Cells 34251
Kunhle J, Bergmann R B and Werner J H 1997J. Cryst. Growth 173 62
Lee S H, Bergmann R, Bauser E and Queisser H 1994Mater. Letts 19 1
Long S I, Ballantyne J M and Eastman L F 1974J. Cryst. Growth 26 13
Longo J T, Harris J S and Chu J C 1972J. Cryst. Growth 15105
Lu Y C, Bauser E and Queisser H J 1992J. Cryst. Growth 121 566
Majumdar D, Chatterjee S, Gangopadhyay U and Saha H 2001Thin silicon solar cell on LPE grown layer in improvised slider boat, Crystal growth and characterization, Proc. int. workshop prep. & charac. tech. imp. single crystals (eds) S K Gupta, S K Halder and G Bhagvannarayana (New Delhi NPL) pp 640–644
McNelly J B, Hall R B, Barnett A M and Tiller W A 1984J. Cryst. Growth 70 420
Minden H T 1970J. Cryst. Growth 6 228
Meinders H 1974J. Cry st. Growth 26 180
Murray B T, Coriell S R and McFadden G B 1991J. Cryst. Growth 110 713
Nishinaga T and Suzuki T 1993J. Cryst. Growth 128 37
Nishida S, Nakagawa K, Iwane M, Iwasaki Y, Ukigo N, Mizutani M and Saoji T 2001Sol. Energy Mater. and Sol. Cells 65 525
Ogawa H, Guo Q and Ohta K 1995J. Cryst. Growth 155 193
Peter K, Kopecek R, Hotzel, Fath P, Butcher E, Zahedi C and Ferrazza F 2002Sol. Energy Mater. and Sol. Cells 74 219
Saha H, Majumdar D, Chatterjee S, Gangopadhyay U and Mon- dal A 2000LPE growth of silicon for photonic devices, Proc. int. conf. on fibre optics and photonics, Kolkata (New Delhi: Allied publishers Ltd) pp 687–689
Saha H, Majumdar D, Chatterjee S and Gangopadhyay U 2001 Indian Patent application no. 482/cal/2001
Sang H and Miller W A 1970J. Cryst. Growth 6 303
Shi Z, Young T L, Zheng G F and Green M A 1993Sol. Energy Mater. and Sol. Cells 31 51
Shi Z, Zhang W, Zheng G F, Kurianski J, Green M A and Bergmann R 1995J. Cryst. Growth 151 278
Shi Z, Zhang W, Zheng G F, Chin V L, Stephen A, Green M A and Bergmann R 1996Sol. Energy Mater. and Sol. Cells 41/42 53
Steiner B and Wagnor B 1995J. Cryst. Growth 146 293
Sukegawa T, Kimura M and Tanaka A 1988J. Cryst. Growth 92 46
Suzuki Y, Nishinaga T and Sanada T 1990J. Cryst. Growth 99 229
Venkataraghavan R, Udayashankar N K, Rodrigues B V, Rao K S R K and Bhat H L 1999Bull. Mater. Sci. 22 133
Wagnor B, Wawra H, Dorsch W, Albrecht M, Krome R, Strunk H P, Riedel, Moller H J and Appel W 1997J. Cryst. Growth 174 680
Wang T H and Ciszek T F 1994Conference record of 1st IEEE world conference on photovoltaic energy conversion (Hawaii: IEEE Electron Devices Society) p. 1250
Wang T H, Ciszek T F, Reddy R, Asher S and King D 1996Conference record of 25th IEEE PVSC (Washington DC: IEEE Electron Devices Society) p. 689
Weber K J and Blakers A W 1995J. Cryst. Growth 154 54
Weber K J, Catchpole K and Blakers A W 1998J. Cryst. Growth 186369
Wilcox W R 1974J. Cryst. Growth 26 153
Wilcox W R 1983J. Cryst. Growth 65 133
Zheng G F, Shi Z, Bergmann R, Dai X, Robinson S, Wang A, Kurianski J and Green M 1994Sol. Energy Mater. and Sol. Cells 32 129
Zheng G F, Zhang W, Shi Z, Gross M, Sproul A B, Wenham S R and Green M A 1996Sol. Energy Mater. and Sol. Cells 40 231
Zinke-Allmang M 1999Thin Solid Films 346 1
Zopler J C and Barnett A M 1989J. Appl. Phys. 66 210
Zytkiewicz Z R 1989J. Cryst. Growth 94 919
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Majumdar, D., Chatterjee, S., Gangopadhyay, U. et al. Modified technique of using conventional slider boat for liquid phase epitaxy of silicon for solar cell application. Bull Mater Sci 26, 643–654 (2003). https://doi.org/10.1007/BF02704330
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DOI: https://doi.org/10.1007/BF02704330