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Localized deposition of GaAs/GaInP heterostructures using LP-MOVPE

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Abstract

GaInP layers were grown selectively by low pressure MOVPE in patterned SiO2 masks on GaAs (100) substrates. The variation of the composition and spontaneous ordering phenomena were analysed by Raman spectroscopy and photoluminescence. In contrast to GaInAs, the composition of GalnP shows only a very weak dependence on the size of the structures. On the other hand, there is a shift of the bandgap energy up to 40 meV with decreasing size of the stripes caused by ordering of the Ga and In atoms. Based on these findings lattice matched GaAs/GalnP multilayers were grown to delineate the growth history of the structures. It was demonstrated that the growth habit of deposition in narrow slits (>1μm) can be used to produce mesa-like stripes with dimensions below 100 nm on top of the mesa. Results of GaAs/GaInP quantum wells selectively grown on top of a mesa are presented.

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Author notes

  1. P. Balk

    Present address: DIMES, Technical University Delft, 2600, GB Delft, The Netherlands

Authors and Affiliations

  1. Institute of Semiconductor Electronics I, Technical University Aachen, D-5100, Aachen, Germany

    M. Maassen, O. Kayser, R. Westphalen, F. E. G. Guimaraes, J. Geurts, J. Finders & P. Balk

  2. I. Physikalisches Institut, Technical University Aachen, D-5100, Aachen, Germany

    J. Geurts & J. Finders

Authors
  1. M. Maassen
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  2. O. Kayser
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  3. R. Westphalen
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  4. F. E. G. Guimaraes
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  5. J. Geurts
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  6. J. Finders
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  7. P. Balk
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Maassen, M., Kayser, O., Westphalen, R. et al. Localized deposition of GaAs/GaInP heterostructures using LP-MOVPE. J. Electron. Mater. 21, 257–264 (1992). https://doi.org/10.1007/BF02660451

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  • DOI: https://doi.org/10.1007/BF02660451

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