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Thermal crystallization studies on Ga−Te glasses

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Abstract

Semiconducting GaxTe100−x (17≤x≤25) glasses have been prepared by melt quenching method and thermal crystallization studies carried out using differential scanning calorimetry. On heating, virgin GaxTe100−x glasses exhibit one glass transition and two crystallization reactions. The first crystallization reaction corresponds to the precipitation of hexagonal Te and the second one to the crystallization of the matrix into zinc blende Ga2Te3 phase. If GaxTe100−x glasses are quenched to ambient temperature fromT crl and reheated, they exhibit the phenomenon of double glass transition.

Zusammenfassung

Mittels der Abschreckmethode wurden halbleitende GaxTe100−x (17≤x≤25) Gläser hergestellt und mit Hilfe von DSC thermische Kristallisationsuntersuchungen durchgeführt. Beim Erhitzen zeigen frischgefertigte GaxTe100−x-Gläser eine Glasumwandlung und zwei Kristallisationsreaktionen. Die erste Kristallisationsreaktion entspricht der Präzipitation von hexagonalem Te und die zweite der Kristallisation der Matrix in die Zinkblendenphase Ga2Te3. Werden GaxTe100−x-Gläser vonT crl auf Umgebungstemperatur abgeschreckt und wieder erhitzt, zeigen sie die Erscheinung der Doppelglasumwandlung.

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Author notes

  1. M. V. N. Prasad

    Present address: LPSC, ISRO, Bangalore, India

  2. G. Parthasarathy

    Present address: NGRI, Hyderabad, India

Authors and Affiliations

  1. Instrumentation and Services Unit, Department of Physics, Indian Institute of Science, 560 012, Bangalore, India

    M. V. N. Prasad, S. Asokan, G. Parthasarathy, S. S. K. Titus & E. S. R. Gopal

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  1. M. V. N. Prasad
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  2. S. Asokan
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  3. G. Parthasarathy
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  4. S. S. K. Titus
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  5. E. S. R. Gopal
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Prasad, M.V.N., Asokan, S., Parthasarathy, G. et al. Thermal crystallization studies on Ga−Te glasses. Journal of Thermal Analysis 44, 583–587 (1995). https://doi.org/10.1007/BF02636277

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  • DOI: https://doi.org/10.1007/BF02636277

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