Abstract
An improved electromechanical model of the RF MEMS (radio frequency microelectromechanical systems) switches is introduced, in which the effects of intrinsic residual stress from fabrication processes, axial stress due to stretching of beam, and fringing field are taken into account. Four dimensionless numbers are derived from the governing equation of the developed model. A semi-analytical method is developed to calculate the behavior of the RF MEMS switches. Subsequently the influence of the material and geometry parameters on the behavior of the structure is analyzed and compared, and the corresponding analysis with the dimensionless numbers is conducted too. The quantitative relationship between the presented parameters and the critical pull-in voltage is obtained, and the relative importance of those parameters is given.
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The project supported by the National Natural Science Foundation of China, the Chinese Academy of Sciences, the RGC/NSFC Joint Research Scheme (N-HKUST 601/01) and the Joint Laboratory of Microsystems
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Lixian, Z., Tongxi, Y. & Yapu, Z. Numerical analysis of theoretical model of the RF MEMS switches. Acta Mech Sin 20, 178–184 (2004). https://doi.org/10.1007/BF02484263
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DOI: https://doi.org/10.1007/BF02484263