Summary
We have studied the Einstein relation of the diffusivity-mobility ratio of the carriers in Bi in accordance with the McClure and Choi, the hybrid, the Cohen, the Lax and the ellipsoidal parabolic energy band models under magnetic quantization, cross-field configuration, quantum wells, electric-field-aided quantum wells, quantum wells under cross-field configuration, quantumwell wires, electrifield-aided quantum well wires and quantum well wires under cross-field configurations, respectively. The Einstein relation varies with various physical variables in different manners which are totally band structure dependent. We have also suggested an experimental method of determining the diffusivity-to-mobility ratio in degenerate materials having arbitrary dispersion laws.
Similar content being viewed by others
References
G. C. Emch:J. Math. Phys.,14, 1775 (1973).
S. A. Hope, G. Geat andP. T. Landsberg:J. Phys. A,14, 2377 (1981).
W. Bernard, H. Roth, A. P. Schmid andP. Zeldes:Phys. Rev.,131, 627 (1963).
P. T. Landsberg:Eur. J. Phys.,2, 213 (1981).
S. N. Biswas andK. P. Ghatak:Int. J. Electron.,70, 125 (1991).
K. P. Ghatak andB. Mitra:Phys. Scr.,42, 103 (1990).
D. Shoenberg:Proc. R. Soc. London, Ser. A,170, 341 (1939).
W. L. Freeman:Quantum size effects in Bifilms, Ph.D. Thesis, Clemson University, North Carolina, USA (1976).
M. Meltz andM. S. Dresselhaus:Phys. Rev. B,2, 2887 (1970).
J. P. Michendaud, J. Heremans, M. Shayegan andC. Haumont:Phys. Rev. B,26, 2552 (1982).
M. Cankurtaran, H. Celik andT. Alper:J. Phys. F,16, 853 (1986).
B. Lax, J. G. Mavroides, H. J. Zieger andR. J. Keyes:Phys. Rev. Lett.,5, 241 (1960).
Y. H. Kao:Phys. Rev.,129, 1122 (1963).
R. J. Dinger andA. W. Lawson:Phys. Rev. B,7, 5215 (1973).
J. H. Koch andJ. D. Jensen Phys. Rev.,184, 643 (1969).
M. H. Cohen:Phys. Rev.,121, 387 (1961).
S. Takaoka, H. Kawamura, K. Murase andS. Takano:Phys. Rev. B,13, 1428 (1976).
J. W. McClure andK. H. Choi:Solid State Commun.,21, 1015 (1977).
K. P. Ghatak:Int. J. Electron.,71, 239 (1991).
I. M. Tsidilkovskii:Band Structure of Semiconductors (Pergamon Press, Oxford, 1982).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Ghatak, K.P., Ghoshal, A. & Biswas, S.N. A simple analysis of the einstein relation in bismuth under different physical conditions. Il Nuovo Cimento D 15, 39–58 (1993). https://doi.org/10.1007/BF02455849
Received:
Revised:
Accepted:
Issue Date:
DOI: https://doi.org/10.1007/BF02455849