Abstract
A simple theory of current and potential distributions along resistive electrodes is re-examined and generalized for non-linearized Tafel behavior. A model of a passivating electrode is discussed and the generalized theory extended to derive expressions for the current and potential profiles along a partially passivated electrode. The relevant expressions permit a predictive analysis of the feasibility of using the electrochemical passivation method for etch-stop control in fabrication of thin, single crystal silicon structures produced by anisotropic deep etching.
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R. L. Gealer, R. H. Hammerle, H. Karsten and H. S. Wroblowa,J. Appl. Electrochem. 18 (1988) 463.
B. E. Conway and E. Gileadi,Can. J. Chem. 41 (1963) 2447.
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Wroblowa, H.S., Hammerle, R.H. & Gealer, R.L. Potential and current distributions along resistive electrodes. J Appl Electrochem 18, 469–472 (1988). https://doi.org/10.1007/BF01093765
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DOI: https://doi.org/10.1007/BF01093765