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The influence of thickness and deposition temperature on the conduction activation energy of CdSe0.2Te0.8 thin films

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Abstract

The electrical conductivity and stability in resistance of CdSe0.2Te0.8 thin films in different ambients and deposited at different substrate temperatures were investigated. A reduction in conduction activation energy with increase in film thickness and deposition temperature is accounted for by the fact that in CdSe x Te1−x inhomogeneous semiconductor thin films, the potential relief inhomogeneity may be reduced with increase in film thickness and substrate temperature, which results in the decrease of conduction activation energy of the films.

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Authors and Affiliations

  1. Thin Film Laboratory, Department of Physics, Indian Institute of Technology, 600 036, Madras, India

    P. J. Sebastian & V. Sivaramakrishnan

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  1. P. J. Sebastian
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  2. V. Sivaramakrishnan
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Sebastian, P.J., Sivaramakrishnan, V. The influence of thickness and deposition temperature on the conduction activation energy of CdSe0.2Te0.8 thin films. J Mater Sci 25, 1803–1807 (1990). https://doi.org/10.1007/BF01045388

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  • DOI: https://doi.org/10.1007/BF01045388

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